Ultra high repetition rate and very low noise mode locked lasers based on INAS/INP quantum dash active material

  • A. Akrout
  • , K. Merghem
  • , A. Martinez
  • , J. P. Tourrenc
  • , X. Lafosse
  • , G. Aubin
  • , A. Ramdane
  • , F. Lelarge
  • , O. Le Gouezigou
  • , A. Accard
  • , G. H. Duan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Optimization of novel InAs/InP quantum dash nanostructures has allowed the realization of mode locked lasers that exhibit unprecedented performance, enabling subpicosecond pulse generation at >300 GHz repetition rates and very low timing jitter.

Original languageEnglish
Title of host publicationIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages45-47
Number of pages3
ISBN (Print)9781424434336
DOIs
Publication statusPublished - 1 Jan 2009
Externally publishedYes
EventIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
Duration: 10 May 200914 May 2009

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

ConferenceIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Country/TerritoryUnited States
CityNewport Beach, CA
Period10/05/0914/05/09

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