Ultra low threshold at room temperature on 1.55μm InAs/InP(311)B laser with an active zone based on a single quantum dot layer

E. Homeyer; R. Piron; F. Grillot; C. Paranthoen; O. Dehaese; A. Le Corre; K. Tavernier; S. Loualiche

doi:10.1109/LEOS.2006.279083

Ultra low threshold at room temperature on 1.55μm InAs/InP(311)B laser with an active zone based on a single quantum dot layer

E. Homeyer
, R. Piron
, F. Grillot
, C. Paranthoen
, O. Dehaese
, A. Le Corre
, K. Tavernier
, S. Loualiche

Centre national de la recherche scientifique

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

For the first time, a laser emission at 1.55 μm telecommunication wavelength is obtained on a single quantum dots (QD) layer laser at room temperature with a threshold current density as low as 320A/cm².

Original language	English
Title of host publication	19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	870-871
Number of pages	2
ISBN (Print)	0780395557, 9780780395558
DOIs	https://doi.org/10.1109/LEOS.2006.279083
Publication status	Published - 1 Jan 2006
Event	19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS - Montreal, QC, Canada Duration: 29 Oct 2006 → 2 Nov 2006

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)	1092-8081

Conference

Conference	19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
Country/Territory	Canada
City	Montreal, QC
Period	29/10/06 → 2/11/06

Access to Document

10.1109/LEOS.2006.279083

Cite this

Homeyer, E., Piron, R., Grillot, F., Paranthoen, C., Dehaese, O., Le Corre, A., Tavernier, K., & Loualiche, S. (2006). Ultra low threshold at room temperature on 1.55μm InAs/InP(311)B laser with an active zone based on a single quantum dot layer. In 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS (pp. 870-871). Article 4054463 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LEOS.2006.279083

Homeyer, E. ; Piron, R. ; Grillot, F. et al. / Ultra low threshold at room temperature on 1.55μm InAs/InP(311)B laser with an active zone based on a single quantum dot layer. 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS. Institute of Electrical and Electronics Engineers Inc., 2006. pp. 870-871 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

@inproceedings{b606bf18e11b4eae8128d92b6c017b58,

title = "Ultra low threshold at room temperature on 1.55μm InAs/InP(311)B laser with an active zone based on a single quantum dot layer",

abstract = "For the first time, a laser emission at 1.55 μm telecommunication wavelength is obtained on a single quantum dots (QD) layer laser at room temperature with a threshold current density as low as 320A/cm2.",

author = "E. Homeyer and R. Piron and F. Grillot and C. Paranthoen and O. Dehaese and \{Le Corre\}, A. and K. Tavernier and S. Loualiche",

year = "2006",

month = jan,

day = "1",

doi = "10.1109/LEOS.2006.279083",

language = "English",

isbn = "0780395557",

series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "870--871",

booktitle = "19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS",

note = "19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS ; Conference date: 29-10-2006 Through 02-11-2006",

}

Homeyer, E, Piron, R, Grillot, F, Paranthoen, C, Dehaese, O, Le Corre, A, Tavernier, K & Loualiche, S 2006, Ultra low threshold at room temperature on 1.55μm InAs/InP(311)B laser with an active zone based on a single quantum dot layer. in 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS., 4054463, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Institute of Electrical and Electronics Engineers Inc., pp. 870-871, 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS, Montreal, QC, Canada, 29/10/06. https://doi.org/10.1109/LEOS.2006.279083

Ultra low threshold at room temperature on 1.55μm InAs/InP(311)B laser with an active zone based on a single quantum dot layer. / Homeyer, E.; Piron, R.; Grillot, F. et al.
19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS. Institute of Electrical and Electronics Engineers Inc., 2006. p. 870-871 4054463 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultra low threshold at room temperature on 1.55μm InAs/InP(311)B laser with an active zone based on a single quantum dot layer

AU - Homeyer, E.

AU - Piron, R.

AU - Grillot, F.

AU - Paranthoen, C.

AU - Dehaese, O.

AU - Le Corre, A.

AU - Tavernier, K.

AU - Loualiche, S.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - For the first time, a laser emission at 1.55 μm telecommunication wavelength is obtained on a single quantum dots (QD) layer laser at room temperature with a threshold current density as low as 320A/cm2.

AB - For the first time, a laser emission at 1.55 μm telecommunication wavelength is obtained on a single quantum dots (QD) layer laser at room temperature with a threshold current density as low as 320A/cm2.

U2 - 10.1109/LEOS.2006.279083

DO - 10.1109/LEOS.2006.279083

M3 - Conference contribution

AN - SCOPUS:39049093123

SN - 0780395557

SN - 9780780395558

T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

SP - 870

EP - 871

BT - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS

Y2 - 29 October 2006 through 2 November 2006

ER -

Homeyer E, Piron R, Grillot F, Paranthoen C, Dehaese O, Le Corre A et al. Ultra low threshold at room temperature on 1.55μm InAs/InP(311)B laser with an active zone based on a single quantum dot layer. In 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS. Institute of Electrical and Electronics Engineers Inc. 2006. p. 870-871. 4054463. (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). doi: 10.1109/LEOS.2006.279083

Ultra low threshold at room temperature on 1.55μm InAs/InP(311)B laser with an active zone based on a single quantum dot layer

Abstract

Publication series

Conference

Access to Document

Fingerprint

Cite this