Abstract
We investigate stochastic and deterministic reliability problems in the hybrid magnetic tunnel junction (MTJ)/MOS circuit which is implemented with ultra thin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) technology. A spin torque transfer (STT) magnetic flip-flop (MFF) is designed with ultra wide voltage range, with 0.5 V to 1.2 V sense/read voltage, and 0.95 V to 2 V writing voltage, by using an industrial 28 nm design kit and a physics-based STT-MTJ compact model. MFF performance can be improved with forward body bias (FBB) technology. The reliability-aware study shows that variability induced read/write failure is more dominant compared with aging induced degradation. Reliability-aware design of STT-MFF is discussed by proper selection of operation voltage.
| Original language | English |
|---|---|
| Pages (from-to) | 1323-1327 |
| Number of pages | 5 |
| Journal | Microelectronics Reliability |
| Volume | 55 |
| Issue number | 9-10 |
| DOIs | |
| Publication status | Published - 1 Aug 2015 |
Keywords
- FDSOI
- Magnetic tunnel junction
- Reliability
- STT-MFF
- Ultra wide voltage range
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