Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers

Frédéric Grillot; D. Arsenijevic; H. Huang; D. Bimberg

doi:10.1117/12.2299678

Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers

Frédéric Grillot, D. Arsenijevic, H. Huang, D. Bimberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Quantum dot nanostructures are one of the best practical examples of emerging nanotechnologies hence offering superior properties as compared to their quantum well counterparts. InAs/GaAs quantum dots allow producing energy- and cost-efficient devices with outstanding temperature stability, lowest threshold current, ultrafast gain dynamics, and low amplified spontaneous emission. This paper reports on the recent achievements in ultrafast and nonlinear dynamics properties of InAs/GaAs quantum dot lasers for radar systems, wireless communications and high-speed optical communications. Passive mode-locking is shown to exhibit a great potential for microwave, millimeter-wave and Terahertz signal generation with high repetition frequency tuning and jitter reduction. The optical feedback is also used to stabilize the pulse emission leading an integrated timing jitter as low as 90 fs without consuming additional power. Lastly, multimode optical feedback dynamics of InAs/GaAs QD lasers emitting on different lasing states is also studied. In particular, a chaos free operation is observed for the first time from the ground state lasing operation.

Original language	English
Title of host publication	Quantum Dots and Nanostructures
Subtitle of host publication	Growth, Characterization, and Modeling XV
Editors	Diana L. Huffaker, Holger Eisele
Publisher	SPIE
ISBN (Electronic)	9781510615717
DOIs	https://doi.org/10.1117/12.2299678
Publication status	Published - 1 Jan 2018
Externally published	Yes
Event	Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV 2018 - San Francisco, United States Duration: 29 Jan 2018 → 31 Jan 2018

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10543
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV 2018
Country/Territory	United States
City	San Francisco
Period	29/01/18 → 31/01/18

Keywords

Quantum dot lasers
high-speed communications
optical feedback
passive mode-locking
radars
wireless communications

Access to Document

10.1117/12.2299678

Cite this

Grillot, F., Arsenijevic, D., Huang, H., & Bimberg, D. (2018). Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers. In D. L. Huffaker, & H. Eisele (Eds.), Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV Article 105430M (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10543). SPIE. https://doi.org/10.1117/12.2299678

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abstract = "Quantum dot nanostructures are one of the best practical examples of emerging nanotechnologies hence offering superior properties as compared to their quantum well counterparts. InAs/GaAs quantum dots allow producing energy- and cost-efficient devices with outstanding temperature stability, lowest threshold current, ultrafast gain dynamics, and low amplified spontaneous emission. This paper reports on the recent achievements in ultrafast and nonlinear dynamics properties of InAs/GaAs quantum dot lasers for radar systems, wireless communications and high-speed optical communications. Passive mode-locking is shown to exhibit a great potential for microwave, millimeter-wave and Terahertz signal generation with high repetition frequency tuning and jitter reduction. The optical feedback is also used to stabilize the pulse emission leading an integrated timing jitter as low as 90 fs without consuming additional power. Lastly, multimode optical feedback dynamics of InAs/GaAs QD lasers emitting on different lasing states is also studied. In particular, a chaos free operation is observed for the first time from the ground state lasing operation.",

keywords = "Quantum dot lasers, high-speed communications, optical feedback, passive mode-locking, radars, wireless communications",

author = "Fr{\'e}d{\'e}ric Grillot and D. Arsenijevic and H. Huang and D. Bimberg",

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Grillot, F, Arsenijevic, D, Huang, H & Bimberg, D 2018, Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers. in DL Huffaker & H Eisele (eds), Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV., 105430M, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10543, SPIE, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV 2018, San Francisco, United States, 29/01/18. https://doi.org/10.1117/12.2299678

Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers. / Grillot, Frédéric; Arsenijevic, D.; Huang, H. et al.
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV. ed. / Diana L. Huffaker; Holger Eisele. SPIE, 2018. 105430M (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10543).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N1 - Publisher Copyright: © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

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N2 - Quantum dot nanostructures are one of the best practical examples of emerging nanotechnologies hence offering superior properties as compared to their quantum well counterparts. InAs/GaAs quantum dots allow producing energy- and cost-efficient devices with outstanding temperature stability, lowest threshold current, ultrafast gain dynamics, and low amplified spontaneous emission. This paper reports on the recent achievements in ultrafast and nonlinear dynamics properties of InAs/GaAs quantum dot lasers for radar systems, wireless communications and high-speed optical communications. Passive mode-locking is shown to exhibit a great potential for microwave, millimeter-wave and Terahertz signal generation with high repetition frequency tuning and jitter reduction. The optical feedback is also used to stabilize the pulse emission leading an integrated timing jitter as low as 90 fs without consuming additional power. Lastly, multimode optical feedback dynamics of InAs/GaAs QD lasers emitting on different lasing states is also studied. In particular, a chaos free operation is observed for the first time from the ground state lasing operation.

AB - Quantum dot nanostructures are one of the best practical examples of emerging nanotechnologies hence offering superior properties as compared to their quantum well counterparts. InAs/GaAs quantum dots allow producing energy- and cost-efficient devices with outstanding temperature stability, lowest threshold current, ultrafast gain dynamics, and low amplified spontaneous emission. This paper reports on the recent achievements in ultrafast and nonlinear dynamics properties of InAs/GaAs quantum dot lasers for radar systems, wireless communications and high-speed optical communications. Passive mode-locking is shown to exhibit a great potential for microwave, millimeter-wave and Terahertz signal generation with high repetition frequency tuning and jitter reduction. The optical feedback is also used to stabilize the pulse emission leading an integrated timing jitter as low as 90 fs without consuming additional power. Lastly, multimode optical feedback dynamics of InAs/GaAs QD lasers emitting on different lasing states is also studied. In particular, a chaos free operation is observed for the first time from the ground state lasing operation.

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ER -

Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers

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Keywords

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