Ultrafast dynamics with time-resolved ARPES: Photoexcited electrons in monochalcogenide semiconductors

Zhesheng Chen; Jonathan Caillaux; Jiuxiang Zhang; Evangelos Papalazarou; Jingwei Dong; Jean Pascal Rueff; Amina Taleb-Ibrahimi; Luca Perfetti; Marino Marsi

doi:10.5802/CRPHYS.57

Ultrafast dynamics with time-resolved ARPES: Photoexcited electrons in monochalcogenide semiconductors

Zhesheng Chen
, Jonathan Caillaux
, Jiuxiang Zhang
, Evangelos Papalazarou
, Jingwei Dong
, Jean Pascal Rueff
, Amina Taleb-Ibrahimi
, Luca Perfetti
, Marino Marsi

Université Paris-Saclay
CEA/UVSQ/CNRS
Synchrotron SOLEIL

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Time-resolved ARPES makes it possible to directly visualize the band dispersion of photoexcited solids, as well as to study its time evolution on the femtosecond time scale. In this article, we show how this technique can be used to monitor the ultrafast hot carrier dynamics and the conduction band dispersion in two typical monochalcogenide semiconductors: direct band gap, n-type indium selenide and indirect band gap, p-type germanium selenide. With this approach, one can directly estimate the effective electron masses of these semiconductors. Moreover, the dynamics of hot electrons in the two semiconductors are analyzed and compared. Our findings provide valuable information for the use of monochalcogenide semiconductors in future optoelectronic devices.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	Comptes Rendus Physique
Volume	22
DOIs	https://doi.org/10.5802/CRPHYS.57
Publication status	Published - 1 Jan 2021
Externally published	Yes

Keywords

Effective mass
Monochalcogenide semiconductor
Out-of-equilibrium 2D materials
Time-resolved ARPES
Ultrafast dynamics

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10.5802/CRPHYS.57

Cite this

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title = "Ultrafast dynamics with time-resolved ARPES: Photoexcited electrons in monochalcogenide semiconductors",

abstract = "Time-resolved ARPES makes it possible to directly visualize the band dispersion of photoexcited solids, as well as to study its time evolution on the femtosecond time scale. In this article, we show how this technique can be used to monitor the ultrafast hot carrier dynamics and the conduction band dispersion in two typical monochalcogenide semiconductors: direct band gap, n-type indium selenide and indirect band gap, p-type germanium selenide. With this approach, one can directly estimate the effective electron masses of these semiconductors. Moreover, the dynamics of hot electrons in the two semiconductors are analyzed and compared. Our findings provide valuable information for the use of monochalcogenide semiconductors in future optoelectronic devices.",

keywords = "Effective mass, Monochalcogenide semiconductor, Out-of-equilibrium 2D materials, Time-resolved ARPES, Ultrafast dynamics",

author = "Zhesheng Chen and Jonathan Caillaux and Jiuxiang Zhang and Evangelos Papalazarou and Jingwei Dong and Rueff, \{Jean Pascal\} and Amina Taleb-Ibrahimi and Luca Perfetti and Marino Marsi",

note = "Publisher Copyright: {\textcopyright} Acad{\'e}mie des sciences, Paris and the authors, 2021. Some rights reserved.",

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month = jan,

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doi = "10.5802/CRPHYS.57",

language = "English",

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journal = "Comptes Rendus Physique",

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T1 - Ultrafast dynamics with time-resolved ARPES

T2 - Photoexcited electrons in monochalcogenide semiconductors

AU - Chen, Zhesheng

AU - Caillaux, Jonathan

AU - Zhang, Jiuxiang

AU - Papalazarou, Evangelos

AU - Dong, Jingwei

AU - Rueff, Jean Pascal

AU - Taleb-Ibrahimi, Amina

AU - Perfetti, Luca

AU - Marsi, Marino

PY - 2021/1/1

Y1 - 2021/1/1

N2 - Time-resolved ARPES makes it possible to directly visualize the band dispersion of photoexcited solids, as well as to study its time evolution on the femtosecond time scale. In this article, we show how this technique can be used to monitor the ultrafast hot carrier dynamics and the conduction band dispersion in two typical monochalcogenide semiconductors: direct band gap, n-type indium selenide and indirect band gap, p-type germanium selenide. With this approach, one can directly estimate the effective electron masses of these semiconductors. Moreover, the dynamics of hot electrons in the two semiconductors are analyzed and compared. Our findings provide valuable information for the use of monochalcogenide semiconductors in future optoelectronic devices.

AB - Time-resolved ARPES makes it possible to directly visualize the band dispersion of photoexcited solids, as well as to study its time evolution on the femtosecond time scale. In this article, we show how this technique can be used to monitor the ultrafast hot carrier dynamics and the conduction band dispersion in two typical monochalcogenide semiconductors: direct band gap, n-type indium selenide and indirect band gap, p-type germanium selenide. With this approach, one can directly estimate the effective electron masses of these semiconductors. Moreover, the dynamics of hot electrons in the two semiconductors are analyzed and compared. Our findings provide valuable information for the use of monochalcogenide semiconductors in future optoelectronic devices.

KW - Effective mass

KW - Monochalcogenide semiconductor

KW - Out-of-equilibrium 2D materials

KW - Time-resolved ARPES

KW - Ultrafast dynamics

U2 - 10.5802/CRPHYS.57

DO - 10.5802/CRPHYS.57

M3 - Article

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JO - Comptes Rendus Physique

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ER -

Ultrafast dynamics with time-resolved ARPES: Photoexcited electrons in monochalcogenide semiconductors

Abstract

Keywords

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