Ultrafast electron redistribution in intrinsic GaAs

F. X. Camescasse; A. Alexandrou; D. Hulin; L. Banyai; D. B.Tran Thoai; H. Haug

Ultrafast electron redistribution in intrinsic GaAs

F. X. Camescasse
, A. Alexandrou
, D. Hulin
, L. Banyai
, D. B.Tran Thoai
, H. Haug

Research output: Contribution to journal › Conference article › peer-review

Abstract

A nondegenerate pump-probe scheme was used to isolate the electron dynamics: the pump pulse excites electrons from the heavy-hole (HH) and light-hole (LH) valence bands while the probe pulse tests the absorption saturation of the interband from the split-off (SO) valence band to the conduction band C. A Ti:sapphire modelocked oscillator and regenerative amplifier system and spectral continuum generation for the pulse probe was used. The sample was an intrinsic GaAs layer, antireflection coated on both sides and held at 15 K. The differential absorption spectra showed to broad peaks at about 1913 and 1950 meV resulting from spectral hole burning.

Original language	English
Pages (from-to)	220-221
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	11
Publication status	Published - 1 Jan 1997
Event	Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA Duration: 18 May 1997 → 23 May 1997

Cite this

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title = "Ultrafast electron redistribution in intrinsic GaAs",

abstract = "A nondegenerate pump-probe scheme was used to isolate the electron dynamics: the pump pulse excites electrons from the heavy-hole (HH) and light-hole (LH) valence bands while the probe pulse tests the absorption saturation of the interband from the split-off (SO) valence band to the conduction band C. A Ti:sapphire modelocked oscillator and regenerative amplifier system and spectral continuum generation for the pulse probe was used. The sample was an intrinsic GaAs layer, antireflection coated on both sides and held at 15 K. The differential absorption spectra showed to broad peaks at about 1913 and 1950 meV resulting from spectral hole burning.",

author = "Camescasse, \{F. X.\} and A. Alexandrou and D. Hulin and L. Banyai and Thoai, \{D. B.Tran\} and H. Haug",

year = "1997",

month = jan,

day = "1",

language = "English",

volume = "11",

pages = "220--221",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

note = "Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 18-05-1997 Through 23-05-1997",

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TY - JOUR

T1 - Ultrafast electron redistribution in intrinsic GaAs

AU - Camescasse, F. X.

AU - Alexandrou, A.

AU - Hulin, D.

AU - Banyai, L.

AU - Thoai, D. B.Tran

AU - Haug, H.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A nondegenerate pump-probe scheme was used to isolate the electron dynamics: the pump pulse excites electrons from the heavy-hole (HH) and light-hole (LH) valence bands while the probe pulse tests the absorption saturation of the interband from the split-off (SO) valence band to the conduction band C. A Ti:sapphire modelocked oscillator and regenerative amplifier system and spectral continuum generation for the pulse probe was used. The sample was an intrinsic GaAs layer, antireflection coated on both sides and held at 15 K. The differential absorption spectra showed to broad peaks at about 1913 and 1950 meV resulting from spectral hole burning.

AB - A nondegenerate pump-probe scheme was used to isolate the electron dynamics: the pump pulse excites electrons from the heavy-hole (HH) and light-hole (LH) valence bands while the probe pulse tests the absorption saturation of the interband from the split-off (SO) valence band to the conduction band C. A Ti:sapphire modelocked oscillator and regenerative amplifier system and spectral continuum generation for the pulse probe was used. The sample was an intrinsic GaAs layer, antireflection coated on both sides and held at 15 K. The differential absorption spectra showed to broad peaks at about 1913 and 1950 meV resulting from spectral hole burning.

M3 - Conference article

AN - SCOPUS:0030675873

SN - 1092-8081

VL - 11

SP - 220

EP - 221

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO

Y2 - 18 May 1997 through 23 May 1997

ER -

Ultrafast electron redistribution in intrinsic GaAs

Abstract

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