Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates

N. El Dahdah; G. Aubin; J. C. Harmand; A. Ramdane; A. Shen; F. Devaux; A. Garreau; B. E. Benkelfat

doi:10.1063/1.1711165

Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates

N. El Dahdah
, G. Aubin
, J. C. Harmand
, A. Ramdane
, A. Shen
, F. Devaux
, A. Garreau
, B. E. Benkelfat

Centre national de la recherche scientifique
Research and Invovation Department
CNRS SAMOVAR UMR 5157

Research output: Contribution to journal › Article › peer-review

Abstract

The InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulators (EAM) for ultrafast all-optical signal processing were analyzed. On the use of small conduction and valence band offsets, the structure design was based. The cross-absorption modulation was used to obtain switching windows as short as 5 ps for a 2 V applied reverse bias. The results show that the EAM structure is expected to exhibit a wide operating spectral band, namely 30 nm.

Original language	English
Pages (from-to)	4268-4270
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	21
DOIs	https://doi.org/10.1063/1.1711165
Publication status	Published - 24 May 2004
Externally published	Yes

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title = "Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates",

abstract = "The InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulators (EAM) for ultrafast all-optical signal processing were analyzed. On the use of small conduction and valence band offsets, the structure design was based. The cross-absorption modulation was used to obtain switching windows as short as 5 ps for a 2 V applied reverse bias. The results show that the EAM structure is expected to exhibit a wide operating spectral band, namely 30 nm.",

author = "\{El Dahdah\}, N. and G. Aubin and Harmand, \{J. C.\} and A. Ramdane and A. Shen and F. Devaux and A. Garreau and Benkelfat, \{B. E.\}",

year = "2004",

month = may,

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doi = "10.1063/1.1711165",

language = "English",

volume = "84",

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journal = "Applied Physics Letters",

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T1 - Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates

AU - El Dahdah, N.

AU - Aubin, G.

AU - Harmand, J. C.

AU - Ramdane, A.

AU - Shen, A.

AU - Devaux, F.

AU - Garreau, A.

AU - Benkelfat, B. E.

PY - 2004/5/24

Y1 - 2004/5/24

N2 - The InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulators (EAM) for ultrafast all-optical signal processing were analyzed. On the use of small conduction and valence band offsets, the structure design was based. The cross-absorption modulation was used to obtain switching windows as short as 5 ps for a 2 V applied reverse bias. The results show that the EAM structure is expected to exhibit a wide operating spectral band, namely 30 nm.

AB - The InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulators (EAM) for ultrafast all-optical signal processing were analyzed. On the use of small conduction and valence band offsets, the structure design was based. The cross-absorption modulation was used to obtain switching windows as short as 5 ps for a 2 V applied reverse bias. The results show that the EAM structure is expected to exhibit a wide operating spectral band, namely 30 nm.

U2 - 10.1063/1.1711165

DO - 10.1063/1.1711165

M3 - Article

AN - SCOPUS:2942659800

SN - 0003-6951

VL - 84

SP - 4268

EP - 4270

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates

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