TY - JOUR
T1 - Ultralow noise and high-power VECSEL for high dynamic range and broadband RF/optical links
AU - Baili, Ghaya
AU - Morvan, Loïc
AU - Pillet, Grégoire
AU - Bouchoule, Sophie
AU - Zhao, Zhuang
AU - Oudar, Jean Louis
AU - Ménager, Loïc
AU - Formont, Stéphane
AU - Van Dijk, Frédéric
AU - Faugeron, Mickaël
AU - Alouini, Mehdi
AU - Bretenaker, Fabien
AU - Dolfi, Daniel
PY - 2014/10/15
Y1 - 2014/10/15
N2 - We describe a compact, ultralow noise, and high-power semiconductor laser implemented in a high performances wideband externally modulated optical link. The laser is based on a vertical external cavity surface emitting laser (VECSEL) designed for high-power and low-noise operation. Thanks to a specific design of the gain chip, the half-VCSEL, based on a metamorphic Bragg mirror and a report on a copper substrate, an optical power of 110 mW is obtained at 1.55 μm in the single frequency regime. For low-noise operation, the laser cavity is designed for free-relaxation-oscillations operation, i.e., in the so-called class-A regime. The Class-A VECSEL exhibits a relative intensity noise below -170 dB/Hz over a wide frequency bandwidth, from 300 MHz to 40 GHz, except at the laser free spectral range (20.4 GHz). In the low-frequency range, the laser noise, mainly due to transfer of pump noise to laser noise, goes from -110 dB/Hz at 1 kHz down to -158 dB/Hz at 10 MHz. Two externally modulated optical links are implemented and compared in terms of the RF gain and the noise figure. The first optical link is based on the ultralow noise class-A VECSEL and the second one is based on a low noise class-B DFB laser. Thanks to the outstanding noise properties of the designed VECSEL, the VECSEL-based optical link outperforms the DFB-based one, in particular for frequencies larger than 20 GHz.
AB - We describe a compact, ultralow noise, and high-power semiconductor laser implemented in a high performances wideband externally modulated optical link. The laser is based on a vertical external cavity surface emitting laser (VECSEL) designed for high-power and low-noise operation. Thanks to a specific design of the gain chip, the half-VCSEL, based on a metamorphic Bragg mirror and a report on a copper substrate, an optical power of 110 mW is obtained at 1.55 μm in the single frequency regime. For low-noise operation, the laser cavity is designed for free-relaxation-oscillations operation, i.e., in the so-called class-A regime. The Class-A VECSEL exhibits a relative intensity noise below -170 dB/Hz over a wide frequency bandwidth, from 300 MHz to 40 GHz, except at the laser free spectral range (20.4 GHz). In the low-frequency range, the laser noise, mainly due to transfer of pump noise to laser noise, goes from -110 dB/Hz at 1 kHz down to -158 dB/Hz at 10 MHz. Two externally modulated optical links are implemented and compared in terms of the RF gain and the noise figure. The first optical link is based on the ultralow noise class-A VECSEL and the second one is based on a low noise class-B DFB laser. Thanks to the outstanding noise properties of the designed VECSEL, the VECSEL-based optical link outperforms the DFB-based one, in particular for frequencies larger than 20 GHz.
KW - Microwave photonics (MPs)
KW - noise
KW - vertical cavity surface emitting lasers (VCSEL)
U2 - 10.1109/JLT.2014.2326956
DO - 10.1109/JLT.2014.2326956
M3 - Article
AN - SCOPUS:84906872148
SN - 0733-8724
VL - 32
SP - 3489
EP - 3494
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
IS - 20
M1 - 6825795
ER -