TY - GEN
T1 - Ultrathin Cu(In, Ga)Se 2 solar cells
AU - Naghavi, Negar
AU - Jehl, Zacharie
AU - Erfurth, Felix
AU - Guillemoles, Jean François
AU - Donsanti, Frederique
AU - Gérard, Isabelle
AU - Tran-Van, Pierre
AU - Bouttemy, Muriel
AU - Etcheberry, Arnaud
AU - Pelouard, Jean Luc
AU - Collin, Stéphane
AU - Colin, Clément
AU - Péré-Laperne, Nicolas
AU - Dahan, Nir
AU - Greffet, Jean Jacques
AU - Morel, Boris
AU - Djebbour, Zakaria
AU - Darga, Arouna
AU - Mencaraglia, Denis
AU - Voorwinden, Georg
AU - Dimmler, Bernhard
AU - Powalla, Michael
AU - Lincot, Daniel
PY - 2011/12/1
Y1 - 2011/12/1
N2 - Within the UltraCIS project we have started to explore the possibility of reducing down the thickness of the Cu(In, Ga)Se 2 (CIGSe) layer to the sub-micron level (0.1μm) while maintaining a high efficiency level of solar cells. The three main approaches we used are: - Reducing the CIGSe thickness by chemical etching combining the thickness reduction and smoothing effect of the absorber. Efficiency higher than 10 % on small area cells with an absorber thickness of 0.5 μm are obtained. Losses were attributed exclusively to the reduced photocurrent and the loss on texturation of the absorber - Optical management by front contact texturation or by replacement of the back contact by the "lift-off" of CIGSe layer from the Mo layer and deposition of a new reflective back contact. - Application of plasmonic structures to CIGSe solar cells enabling light confinement at the subwavelength scale.
AB - Within the UltraCIS project we have started to explore the possibility of reducing down the thickness of the Cu(In, Ga)Se 2 (CIGSe) layer to the sub-micron level (0.1μm) while maintaining a high efficiency level of solar cells. The three main approaches we used are: - Reducing the CIGSe thickness by chemical etching combining the thickness reduction and smoothing effect of the absorber. Efficiency higher than 10 % on small area cells with an absorber thickness of 0.5 μm are obtained. Losses were attributed exclusively to the reduced photocurrent and the loss on texturation of the absorber - Optical management by front contact texturation or by replacement of the back contact by the "lift-off" of CIGSe layer from the Mo layer and deposition of a new reflective back contact. - Application of plasmonic structures to CIGSe solar cells enabling light confinement at the subwavelength scale.
U2 - 10.1109/PVSC.2011.6185938
DO - 10.1109/PVSC.2011.6185938
M3 - Conference contribution
AN - SCOPUS:84861074214
SN - 9781424499656
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 3642
EP - 3645
BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Y2 - 19 June 2011 through 24 June 2011
ER -