Abstract
We have designed and fabricated ultra-thin (t=120-220nm) GaAs solar cells. Multi-resonant light trapping is achieved with a nanostructured silver back mirror. The short-circuit current predicted by numerical calculations is Jsc=24.9mA/cm2 for t=220nm. The nanostructured silver mirror is combined with localized ohmic contacts. Ultra-thin GaAs solar cells are patterned by soft nano-imprint lithography and transferred on a glass substrate. Short-circuit currents above 21mA/cm2 have been measured on 220nm-thick solar cells.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479979448 |
| DOIs | |
| Publication status | Published - 14 Dec 2015 |
| Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 |
Publication series
| Name | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
|---|
Conference
| Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
|---|---|
| Country/Territory | United States |
| City | New Orleans |
| Period | 14/06/15 → 19/06/15 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- GaAs
- light-trapping
- photovoltaic cells
- plasmonics
- thin film
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