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Ultrathin GaAs solar cells with a nanostructured back mirror

  • Centre national de la recherche scientifique
  • Tokyo University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Citations (Scopus)

Abstract

We have designed and fabricated ultra-thin (t=120-220nm) GaAs solar cells. Multi-resonant light trapping is achieved with a nanostructured silver back mirror. The short-circuit current predicted by numerical calculations is Jsc=24.9mA/cm2 for t=220nm. The nanostructured silver mirror is combined with localized ohmic contacts. Ultra-thin GaAs solar cells are patterned by soft nano-imprint lithography and transferred on a glass substrate. Short-circuit currents above 21mA/cm2 have been measured on 220nm-thick solar cells.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
Publication statusPublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 2015 → 19 Jun 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans
Period14/06/15 → 19/06/15

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • GaAs
  • light-trapping
  • photovoltaic cells
  • plasmonics
  • thin film

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