Abstract
We report on the fabrication and characterization of ultrathin GaAs solar cells with a silver back mirror and absorber thicknesses of only t = 120 nm and t = 220 nm. The silver back mirror is combined with localized ohmic contacts. Without antireflection coating, Fabry-Perot resonances lead to strong enhancement over single-pass absorption (up to 4), and external quantum efficiency reaches 0.8 at resonance wavelengths. An analytical model is used to determine the resonance wavelengths and the absorption maxima. A short-circuit improvement of 27% results from the enhanced absorption induced by the Fabry-Perot resonances. By implementing an additional antireflection coating, short-circuit currents reach 16.3 mA/cm 2 for t = 120 nm and 20.7 mA/cm 2 for t = 220 nm, corresponding to efficiencies of 8.7 % and 12.9 %, respectively.
| Original language | English |
|---|---|
| Article number | 6996003 |
| Pages (from-to) | 565-570 |
| Number of pages | 6 |
| Journal | IEEE Journal of Photovoltaics |
| Volume | 5 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Mar 2015 |
Keywords
- GaAs
- light-trapping
- thin film
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