Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes

A. Gaucher; A. Cattoni; I. Massiot; C. Dupuis; W. Chen; R. Cariou; M. Foldyna; P. Roca Cabarrocas; L. Lalouat; E. Drouard; C. Seassal; S. Collin

doi:10.1109/PVSC.2015.7356215

Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes

A. Gaucher
, A. Cattoni
, I. Massiot
, C. Dupuis
, W. Chen
, R. Cariou
, M. Foldyna
, P. Roca Cabarrocas
, L. Lalouat
, E. Drouard
, C. Seassal
, S. Collin

Centre de Nanosciences et de Nanotechnologies
Institut polytechnique de Paris
Université de Lyon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We report on the fabrication and characterization of both flat and patterned c-Si solar cells on glass. We use epitaxial layers grown by plasma enhanced chemical vapor deposition at low temperature (T<200°C), and anodic bonding on glass substrate. Inverted nanopyramids are fabricated by nanoimprint lithography and wet etching in alkaline solution. With 3μm-thick c-Si layers, the performances achieved with planar solar cells are Jsc = 18.3mA/cm2 and η = 6.1%. With an additional nanopyramid array on the front side of the cell, an improved short-circuit current of 25.3mA/cm2 is obtained. We present the latest experimental results and discuss the path to be followed to achieve low cost, ultrathin c-Si solar cells with a 15% targeted efficiency.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356215
Publication status	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Crystalline silicon
epitaxial transfer
light trapping
nanoimprint lithography
photovoltaic cells
thin films

Access to Document

10.1109/PVSC.2015.7356215

Cite this

Gaucher, A., Cattoni, A., Massiot, I., Dupuis, C., Chen, W., Cariou, R., Foldyna, M., Roca Cabarrocas, P., Lalouat, L., Drouard, E., Seassal, C., & Collin, S. (2015). Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 Article 7356215 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356215

@inproceedings{11f1b0ce69884cf99de5bbc479475e8e,

title = "Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes",

abstract = "We report on the fabrication and characterization of both flat and patterned c-Si solar cells on glass. We use epitaxial layers grown by plasma enhanced chemical vapor deposition at low temperature (T<200°C), and anodic bonding on glass substrate. Inverted nanopyramids are fabricated by nanoimprint lithography and wet etching in alkaline solution. With 3μm-thick c-Si layers, the performances achieved with planar solar cells are Jsc = 18.3mA/cm2 and η = 6.1\%. With an additional nanopyramid array on the front side of the cell, an improved short-circuit current of 25.3mA/cm2 is obtained. We present the latest experimental results and discuss the path to be followed to achieve low cost, ultrathin c-Si solar cells with a 15\% targeted efficiency.",

keywords = "Crystalline silicon, epitaxial transfer, light trapping, nanoimprint lithography, photovoltaic cells, thin films",

author = "A. Gaucher and A. Cattoni and I. Massiot and C. Dupuis and W. Chen and R. Cariou and M. Foldyna and \{Roca Cabarrocas\}, P. and L. Lalouat and E. Drouard and C. Seassal and S. Collin",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356215",

language = "English",

series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

}

Gaucher, A, Cattoni, A, Massiot, I, Dupuis, C, Chen, W, Cariou, R, Foldyna, M , Roca Cabarrocas, P, Lalouat, L, Drouard, E, Seassal, C & Collin, S 2015, Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356215, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15. https://doi.org/10.1109/PVSC.2015.7356215

Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes. / Gaucher, A.; Cattoni, A.; Massiot, I. et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356215 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes

AU - Gaucher, A.

AU - Cattoni, A.

AU - Massiot, I.

AU - Dupuis, C.

AU - Chen, W.

AU - Cariou, R.

AU - Foldyna, M.

AU - Roca Cabarrocas, P.

AU - Lalouat, L.

AU - Drouard, E.

AU - Seassal, C.

AU - Collin, S.

PY - 2015/12/14

Y1 - 2015/12/14

N2 - We report on the fabrication and characterization of both flat and patterned c-Si solar cells on glass. We use epitaxial layers grown by plasma enhanced chemical vapor deposition at low temperature (T<200°C), and anodic bonding on glass substrate. Inverted nanopyramids are fabricated by nanoimprint lithography and wet etching in alkaline solution. With 3μm-thick c-Si layers, the performances achieved with planar solar cells are Jsc = 18.3mA/cm2 and η = 6.1%. With an additional nanopyramid array on the front side of the cell, an improved short-circuit current of 25.3mA/cm2 is obtained. We present the latest experimental results and discuss the path to be followed to achieve low cost, ultrathin c-Si solar cells with a 15% targeted efficiency.

AB - We report on the fabrication and characterization of both flat and patterned c-Si solar cells on glass. We use epitaxial layers grown by plasma enhanced chemical vapor deposition at low temperature (T<200°C), and anodic bonding on glass substrate. Inverted nanopyramids are fabricated by nanoimprint lithography and wet etching in alkaline solution. With 3μm-thick c-Si layers, the performances achieved with planar solar cells are Jsc = 18.3mA/cm2 and η = 6.1%. With an additional nanopyramid array on the front side of the cell, an improved short-circuit current of 25.3mA/cm2 is obtained. We present the latest experimental results and discuss the path to be followed to achieve low cost, ultrathin c-Si solar cells with a 15% targeted efficiency.

KW - Crystalline silicon

KW - epitaxial transfer

KW - light trapping

KW - nanoimprint lithography

KW - photovoltaic cells

KW - thin films

U2 - 10.1109/PVSC.2015.7356215

DO - 10.1109/PVSC.2015.7356215

M3 - Conference contribution

AN - SCOPUS:84961618486

T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Gaucher A, Cattoni A, Massiot I, Dupuis C, Chen W, Cariou R et al. Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7356215. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). doi: 10.1109/PVSC.2015.7356215

Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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