Ultraviolet-induced annealing of hydrogen bonds in silica films deposited at low temperatures

C. Debauche; C. Licoppe; J. Flicstein; O. Dulac; R. A.B. Devine

doi:10.1063/1.107920

Ultraviolet-induced annealing of hydrogen bonds in silica films deposited at low temperatures

C. Debauche
, C. Licoppe
, J. Flicstein
, O. Dulac
, R. A.B. Devine

Orange Labs
Centre National d'Etudes des Télécommuncations

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Exposure of photodeposited silica to ultraviolet irradiation with wavelengths comprised between 170 and 250 nm is shown to cause full removal of Si - H bonds. The photoreaction occurs at low temperatures (0-200°C) in the bulk of the films, is independent of the film thickness, and does not lead to the creation of dangling bonds. An important reaction path involves water groups in the silica films, while direct photolysis of Si - H bonds is ruled out.

Original language	English
Pages (from-to)	306-308
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	3
DOIs	https://doi.org/10.1063/1.107920
Publication status	Published - 1 Jan 1992
Externally published	Yes

Access to Document

10.1063/1.107920

Cite this

@article{d7acebb5f7ac479f919633d5be94c2cc,

title = "Ultraviolet-induced annealing of hydrogen bonds in silica films deposited at low temperatures",

abstract = "Exposure of photodeposited silica to ultraviolet irradiation with wavelengths comprised between 170 and 250 nm is shown to cause full removal of Si - H bonds. The photoreaction occurs at low temperatures (0-200°C) in the bulk of the films, is independent of the film thickness, and does not lead to the creation of dangling bonds. An important reaction path involves water groups in the silica films, while direct photolysis of Si - H bonds is ruled out.",

author = "C. Debauche and C. Licoppe and J. Flicstein and O. Dulac and Devine, \{R. A.B.\}",

year = "1992",

month = jan,

day = "1",

doi = "10.1063/1.107920",

language = "English",

volume = "61",

pages = "306--308",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Ultraviolet-induced annealing of hydrogen bonds in silica films deposited at low temperatures

AU - Debauche, C.

AU - Licoppe, C.

AU - Flicstein, J.

AU - Dulac, O.

AU - Devine, R. A.B.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Exposure of photodeposited silica to ultraviolet irradiation with wavelengths comprised between 170 and 250 nm is shown to cause full removal of Si - H bonds. The photoreaction occurs at low temperatures (0-200°C) in the bulk of the films, is independent of the film thickness, and does not lead to the creation of dangling bonds. An important reaction path involves water groups in the silica films, while direct photolysis of Si - H bonds is ruled out.

AB - Exposure of photodeposited silica to ultraviolet irradiation with wavelengths comprised between 170 and 250 nm is shown to cause full removal of Si - H bonds. The photoreaction occurs at low temperatures (0-200°C) in the bulk of the films, is independent of the film thickness, and does not lead to the creation of dangling bonds. An important reaction path involves water groups in the silica films, while direct photolysis of Si - H bonds is ruled out.

U2 - 10.1063/1.107920

DO - 10.1063/1.107920

M3 - Article

AN - SCOPUS:0011674912

SN - 0003-6951

VL - 61

SP - 306

EP - 308

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Ultraviolet-induced annealing of hydrogen bonds in silica films deposited at low temperatures

Abstract

Access to Document

Fingerprint

Cite this