TY - GEN
T1 - Unlocking High Efficiency in (Ag,Cu)(In,Ga)Se Solar Cells
T2 - 53rd IEEE Photovoltaic Specialists Conference, PVSC 2025
AU - Tom, Thomas
AU - Lontchi, Jackson
AU - Rebai, Amelle
AU - Dufoulon, Vincent
AU - Cacovich, Stefania
AU - Raimondi, Tommaso
AU - Guillemoles, Jean Francois
AU - Naghavi, Negar
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025/1/1
Y1 - 2025/1/1
N2 - The partial substitution of copper (Cu) with silver (Ag) in Cu(In,Ga)Se (CIGS) thin-film solar cells represents a transformative approach to improving absorber layer properties and boosting device efficiency. This study will examine and discuss the effect of Ag alloying (0 < Ag/(Ag+Cu) < 0.3) via thermal evaporation, combined with rubidium fluoride (RbF) post-deposition treatment, on samples with bandgaps ranging from 1.1 to 1.5 eV. The approach significantly affects gallium grading, grain size, open-circuit voltage (Voc), and fill factor (FF), achieving a power conversion efficiency (PCE) up to 20.4% for a ACIGS absorber with a 1.2 eV bandgap.
AB - The partial substitution of copper (Cu) with silver (Ag) in Cu(In,Ga)Se (CIGS) thin-film solar cells represents a transformative approach to improving absorber layer properties and boosting device efficiency. This study will examine and discuss the effect of Ag alloying (0 < Ag/(Ag+Cu) < 0.3) via thermal evaporation, combined with rubidium fluoride (RbF) post-deposition treatment, on samples with bandgaps ranging from 1.1 to 1.5 eV. The approach significantly affects gallium grading, grain size, open-circuit voltage (Voc), and fill factor (FF), achieving a power conversion efficiency (PCE) up to 20.4% for a ACIGS absorber with a 1.2 eV bandgap.
UR - https://www.scopus.com/pages/publications/105016103597
U2 - 10.1109/PVSC59419.2025.11133167
DO - 10.1109/PVSC59419.2025.11133167
M3 - Conference contribution
AN - SCOPUS:105016103597
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 661
EP - 663
BT - 2025 IEEE 53rd Photovoltaic Specialists Conference, PVSC 2025
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 8 June 2025 through 13 June 2025
ER -