Vacancies and dominant electrically active defects in bulk semi-insulating GaAs

M. R. Brozei; C. Corbel

doi:10.1051/jp4:1995107

Vacancies and dominant electrically active defects in bulk semi-insulating GaAs

M. R. Brozei
, C. Corbel

UMZSX
Institut National des Sciences et Techniques Nucléaires

Research output: Contribution to journal › Conference article › peer-review

Abstract

Positron Annihilation techniques have been used to investigate two important defects that occur naturally in semi-insulating (SI) Gallium arsenide. The growth and assessment of SI GaAs and the application of PA to defect analysis of this important material are reported.

Original language	English
Pages (from-to)	63-72
Number of pages	10
Journal	Journal De Physique. IV : JP
Volume	5
Issue number	C8
DOIs	https://doi.org/10.1051/jp4:1995107
Publication status	Published - 1 Jan 1995
Externally published	Yes
Event	International Conference on Martensitic Transformations, ICOMAT 1995 - Lausanne, Switzerland Duration: 20 Aug 1995 → 25 Aug 1995

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title = "Vacancies and dominant electrically active defects in bulk semi-insulating GaAs",

abstract = "Positron Annihilation techniques have been used to investigate two important defects that occur naturally in semi-insulating (SI) Gallium arsenide. The growth and assessment of SI GaAs and the application of PA to defect analysis of this important material are reported.",

author = "Brozei, \{M. R.\} and C. Corbel",

note = "Publisher Copyright: {\textcopyright} EDP Sciences 1995.; International Conference on Martensitic Transformations, ICOMAT 1995 ; Conference date: 20-08-1995 Through 25-08-1995",

year = "1995",

month = jan,

day = "1",

doi = "10.1051/jp4:1995107",

language = "English",

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issn = "1155-4339",

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T1 - Vacancies and dominant electrically active defects in bulk semi-insulating GaAs

AU - Brozei, M. R.

AU - Corbel, C.

N1 - Publisher Copyright: © EDP Sciences 1995.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Positron Annihilation techniques have been used to investigate two important defects that occur naturally in semi-insulating (SI) Gallium arsenide. The growth and assessment of SI GaAs and the application of PA to defect analysis of this important material are reported.

AB - Positron Annihilation techniques have been used to investigate two important defects that occur naturally in semi-insulating (SI) Gallium arsenide. The growth and assessment of SI GaAs and the application of PA to defect analysis of this important material are reported.

U2 - 10.1051/jp4:1995107

DO - 10.1051/jp4:1995107

M3 - Conference article

AN - SCOPUS:0343191231

SN - 1155-4339

VL - 5

SP - 63

EP - 72

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - C8

T2 - International Conference on Martensitic Transformations, ICOMAT 1995

Y2 - 20 August 1995 through 25 August 1995

ER -

Vacancies and dominant electrically active defects in bulk semi-insulating GaAs

Abstract

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