Abstract
We show that positron spectroscopy under illumination can be used to study vacancy defects in excited charge states. In semi-insulating GaAs positrons reveal native Ga vacancies in the experiments in darkness. The photoelectron excitations under illumination change the charge state of the native As vacancies and convert them to effective positron traps. The experiments in the dark after illumination manifest the vacancy nature of the metastable centers EL2 and DX.
| Original language | English |
|---|---|
| Pages (from-to) | 501-504 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 175-178 |
| Issue number | pt 1 |
| Publication status | Published - 1 Jan 1995 |
| Externally published | Yes |
| Event | Proceedings of the 10th International Conference on Positron Annihilation. Part 1 (of 2) - Beijing, China Duration: 23 May 1994 → 29 May 1994 |