Abstract
EL2 and DX centers have been studied by positron annihilation. A vacancy defect is observed in the metastable state of EL2. The vacancy has a smaller open volume than isolated As and Ga vacancies and its charge is negative. A vacancy with metastable properties is also observed in the deep ground state of the DX center. The results are in good agreement with the vacancy interstitial model for the structure of the EL2 and DX centers.
| Original language | English |
|---|---|
| Pages (from-to) | 983-990 |
| Number of pages | 8 |
| Journal | Materials Science Forum |
| Volume | 143-4 |
| Issue number | pt 2 |
| Publication status | Published - 1 Dec 1994 |
| Externally published | Yes |
| Event | Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: 18 Jul 1993 → 23 Jul 1993 |