Very low threshold current density GSMBE 1.55μm gain-coupled DFB lasers

N. Aberkane; B. Thedrez; J. L. Gentner; A. Pinquier; V. Voiriot; L. Le Gouezigou; B. Fernier

doi:10.1049/el:19980371

Very low threshold current density GSMBE 1.55μm gain-coupled DFB lasers

N. Aberkane, B. Thedrez, J. L. Gentner, A. Pinquier, V. Voiriot, L. Le Gouezigou, B. Fernier

Research and Invovation Department

Research output: Contribution to journal › Article › peer-review

Abstract

1.55μm gain-coupled DFB lasers with a periodically etched active layer have been realised using dry-etching and gas source molecular beam epitaxy. Threshold current densities as low as 700 A/cm² have been achieved which is an improvement on previous values reported for gain gratings. Optimised active layer etching and cleaning technologies are reported.

Original language	English
Pages (from-to)	464-465
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	5
DOIs	https://doi.org/10.1049/el:19980371
Publication status	Published - 5 Mar 1998
Externally published	Yes

Access to Document

10.1049/el:19980371

Cite this

@article{af9aeec0c769403b8dc680c520a27f84,

title = "Very low threshold current density GSMBE 1.55μm gain-coupled DFB lasers",

abstract = "1.55μm gain-coupled DFB lasers with a periodically etched active layer have been realised using dry-etching and gas source molecular beam epitaxy. Threshold current densities as low as 700 A/cm2 have been achieved which is an improvement on previous values reported for gain gratings. Optimised active layer etching and cleaning technologies are reported.",

author = "N. Aberkane and B. Thedrez and Gentner, \{J. L.\} and A. Pinquier and V. Voiriot and \{Le Gouezigou\}, L. and B. Fernier",

year = "1998",

month = mar,

day = "5",

doi = "10.1049/el:19980371",

language = "English",

volume = "34",

pages = "464--465",

journal = "Electronics Letters",

issn = "0013-5194",

number = "5",

}

TY - JOUR

T1 - Very low threshold current density GSMBE 1.55μm gain-coupled DFB lasers

AU - Aberkane, N.

AU - Thedrez, B.

AU - Gentner, J. L.

AU - Pinquier, A.

AU - Voiriot, V.

AU - Le Gouezigou, L.

AU - Fernier, B.

PY - 1998/3/5

Y1 - 1998/3/5

N2 - 1.55μm gain-coupled DFB lasers with a periodically etched active layer have been realised using dry-etching and gas source molecular beam epitaxy. Threshold current densities as low as 700 A/cm2 have been achieved which is an improvement on previous values reported for gain gratings. Optimised active layer etching and cleaning technologies are reported.

AB - 1.55μm gain-coupled DFB lasers with a periodically etched active layer have been realised using dry-etching and gas source molecular beam epitaxy. Threshold current densities as low as 700 A/cm2 have been achieved which is an improvement on previous values reported for gain gratings. Optimised active layer etching and cleaning technologies are reported.

U2 - 10.1049/el:19980371

DO - 10.1049/el:19980371

M3 - Article

AN - SCOPUS:0032485174

SN - 0013-5194

VL - 34

SP - 464

EP - 465

JO - Electronics Letters

JF - Electronics Letters

IS - 5

ER -

Very low threshold current density GSMBE 1.55μm gain-coupled DFB lasers

Abstract

Access to Document

Fingerprint

Cite this