Very low voltage flexible n-type organic field effect transistors

Yvan Bonnassieux; Sungyeop Jung; Mohammed Al-Bariqi; Guillaume Gruntz; Yohann Nicolas; Thierry Toupance; Gilles Horowitz

Very low voltage flexible n-type organic field effect transistors

Yvan Bonnassieux, Sungyeop Jung, Mohammed Al-Bariqi, Guillaume Gruntz, Yohann Nicolas, Thierry Toupance, Gilles Horowitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We propose an efficient approach for an n-type OFETs with the same device structure used commonly for p-type. Using TIPSTPDO-tetraCN and cross-linked PMMA, respectively as n-type OSC and dielectric, We have obtained linear regime mobility (1.8±0.2)×10^-2cm²V^-1s^-1, small spatial standard deviation of threshold voltage (∼0.1V), and operating voltage less than 3V.

Original language	English
Title of host publication	22nd International Display Workshops, IDW 2015
Publisher	International Display Workshops
Pages	1566-1568
Number of pages	3
ISBN (Electronic)	9781510845503
Publication status	Published - 1 Jan 2015
Externally published	Yes
Event	22nd International Display Workshops, IDW 2015 - Otsu, Japan Duration: 9 Dec 2015 → 11 Dec 2015

Publication series

Name	Proceedings of the International Display Workshops
Volume	3
ISSN (Print)	1883-2490

Conference

Conference	22nd International Display Workshops, IDW 2015
Country/Territory	Japan
City	Otsu
Period	9/12/15 → 11/12/15

Keywords

Cross-linked polymer gate dielectrics
Flexible electronics
N-type OFETs
Triphenodioxazines derivatives

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "Very low voltage flexible n-type organic field effect transistors",

abstract = "We propose an efficient approach for an n-type OFETs with the same device structure used commonly for p-type. Using TIPSTPDO-tetraCN and cross-linked PMMA, respectively as n-type OSC and dielectric, We have obtained linear regime mobility (1.8±0.2)×10-2cm2V-1s-1, small spatial standard deviation of threshold voltage (∼0.1V), and operating voltage less than 3V.",

keywords = "Cross-linked polymer gate dielectrics, Flexible electronics, N-type OFETs, Triphenodioxazines derivatives",

author = "Yvan Bonnassieux and Sungyeop Jung and Mohammed Al-Bariqi and Guillaume Gruntz and Yohann Nicolas and Thierry Toupance and Gilles Horowitz",

note = "Publisher Copyright: {\textcopyright} 2015 Proceedings of the International Display Workshops. All rights reserved.; 22nd International Display Workshops, IDW 2015 ; Conference date: 09-12-2015 Through 11-12-2015",

year = "2015",

month = jan,

day = "1",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "1566--1568",

booktitle = "22nd International Display Workshops, IDW 2015",

}

Bonnassieux, Y, Jung, S, Al-Bariqi, M, Gruntz, G, Nicolas, Y, Toupance, T & Horowitz, G 2015, Very low voltage flexible n-type organic field effect transistors. in 22nd International Display Workshops, IDW 2015. Proceedings of the International Display Workshops, vol. 3, International Display Workshops, pp. 1566-1568, 22nd International Display Workshops, IDW 2015, Otsu, Japan, 9/12/15.

Very low voltage flexible n-type organic field effect transistors. / Bonnassieux, Yvan; Jung, Sungyeop; Al-Bariqi, Mohammed et al.
22nd International Display Workshops, IDW 2015. International Display Workshops, 2015. p. 1566-1568 (Proceedings of the International Display Workshops; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Very low voltage flexible n-type organic field effect transistors

AU - Bonnassieux, Yvan

AU - Jung, Sungyeop

AU - Al-Bariqi, Mohammed

AU - Gruntz, Guillaume

AU - Nicolas, Yohann

AU - Toupance, Thierry

AU - Horowitz, Gilles

PY - 2015/1/1

Y1 - 2015/1/1

N2 - We propose an efficient approach for an n-type OFETs with the same device structure used commonly for p-type. Using TIPSTPDO-tetraCN and cross-linked PMMA, respectively as n-type OSC and dielectric, We have obtained linear regime mobility (1.8±0.2)×10-2cm2V-1s-1, small spatial standard deviation of threshold voltage (∼0.1V), and operating voltage less than 3V.

AB - We propose an efficient approach for an n-type OFETs with the same device structure used commonly for p-type. Using TIPSTPDO-tetraCN and cross-linked PMMA, respectively as n-type OSC and dielectric, We have obtained linear regime mobility (1.8±0.2)×10-2cm2V-1s-1, small spatial standard deviation of threshold voltage (∼0.1V), and operating voltage less than 3V.

KW - Cross-linked polymer gate dielectrics

KW - Flexible electronics

KW - N-type OFETs

KW - Triphenodioxazines derivatives

M3 - Conference contribution

AN - SCOPUS:85056473394

T3 - Proceedings of the International Display Workshops

SP - 1566

EP - 1568

BT - 22nd International Display Workshops, IDW 2015

PB - International Display Workshops

T2 - 22nd International Display Workshops, IDW 2015

Y2 - 9 December 2015 through 11 December 2015

ER -

Very low voltage flexible n-type organic field effect transistors

Abstract

Publication series

Conference

Keywords

UN SDGs

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