Wet treatment based interface engineering for high efficiency Cu(In,Ga)Se2 solar cells

B. Canava; J. F. Guillemoles; E. B. Yousfi; P. Cowache; H. Kerber; A. Loeffl; H. W. Schock; M. Powalla; D. Hariskos; D. Lincot

doi:10.1016/S0040-6090(99)00861-5

Wet treatment based interface engineering for high efficiency Cu(In,Ga)Se₂ solar cells

B. Canava
, J. F. Guillemoles
, E. B. Yousfi
, P. Cowache
, H. Kerber
, A. Loeffl
, H. W. Schock
, M. Powalla
, D. Hariskos
, D. Lincot

Research output: Contribution to journal › Conference article › peer-review

Abstract

Using atomic layer epitaxy (ALE) which is a soft deposition technique for ZnO it is possible to avoid the deposition of thick buffer layers by chemical bath deposition (CBD) and wet treatments can be almost reduced to surface treatments. In this work new electrochemical and chemical treatments have been designed with the objective of surface passivation and surface doping by using solutions with different reactivities (via pH, complexing agents, metallic cartons). ZnO layers are then deposited by ALE to complete the junctions. The results show relations between the interface treatment and the cell characteristics. Efficiencies comparable and in some cases higher than those of the reference cells made with CBD CdS and sputtered ZnO have been obtained (up to 12.7% with indium treatments).

Original language	English
Pages (from-to)	187-192
Number of pages	6
Journal	Thin Solid Films
Volume	361
DOIs	https://doi.org/10.1016/S0040-6090(99)00861-5
Publication status	Published - 21 Feb 2000
Externally published	Yes
Event	The 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999

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10.1016/S0040-6090(99)00861-5

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@article{f5975cd95f1447cd90955cb0b5c637d2,

title = "Wet treatment based interface engineering for high efficiency Cu(In,Ga)Se2 solar cells",

abstract = "Using atomic layer epitaxy (ALE) which is a soft deposition technique for ZnO it is possible to avoid the deposition of thick buffer layers by chemical bath deposition (CBD) and wet treatments can be almost reduced to surface treatments. In this work new electrochemical and chemical treatments have been designed with the objective of surface passivation and surface doping by using solutions with different reactivities (via pH, complexing agents, metallic cartons). ZnO layers are then deposited by ALE to complete the junctions. The results show relations between the interface treatment and the cell characteristics. Efficiencies comparable and in some cases higher than those of the reference cells made with CBD CdS and sputtered ZnO have been obtained (up to 12.7\% with indium treatments).",

author = "B. Canava and Guillemoles, \{J. F.\} and Yousfi, \{E. B.\} and P. Cowache and H. Kerber and A. Loeffl and Schock, \{H. W.\} and M. Powalla and D. Hariskos and D. Lincot",

year = "2000",

month = feb,

day = "21",

doi = "10.1016/S0040-6090(99)00861-5",

language = "English",

volume = "361",

pages = "187--192",

journal = "Thin Solid Films",

issn = "0040-6090",

note = "The 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics ; Conference date: 01-06-1999 Through 04-06-1999",

}

TY - JOUR

T1 - Wet treatment based interface engineering for high efficiency Cu(In,Ga)Se2 solar cells

AU - Canava, B.

AU - Guillemoles, J. F.

AU - Yousfi, E. B.

AU - Cowache, P.

AU - Kerber, H.

AU - Loeffl, A.

AU - Schock, H. W.

AU - Powalla, M.

AU - Hariskos, D.

AU - Lincot, D.

PY - 2000/2/21

Y1 - 2000/2/21

N2 - Using atomic layer epitaxy (ALE) which is a soft deposition technique for ZnO it is possible to avoid the deposition of thick buffer layers by chemical bath deposition (CBD) and wet treatments can be almost reduced to surface treatments. In this work new electrochemical and chemical treatments have been designed with the objective of surface passivation and surface doping by using solutions with different reactivities (via pH, complexing agents, metallic cartons). ZnO layers are then deposited by ALE to complete the junctions. The results show relations between the interface treatment and the cell characteristics. Efficiencies comparable and in some cases higher than those of the reference cells made with CBD CdS and sputtered ZnO have been obtained (up to 12.7% with indium treatments).

AB - Using atomic layer epitaxy (ALE) which is a soft deposition technique for ZnO it is possible to avoid the deposition of thick buffer layers by chemical bath deposition (CBD) and wet treatments can be almost reduced to surface treatments. In this work new electrochemical and chemical treatments have been designed with the objective of surface passivation and surface doping by using solutions with different reactivities (via pH, complexing agents, metallic cartons). ZnO layers are then deposited by ALE to complete the junctions. The results show relations between the interface treatment and the cell characteristics. Efficiencies comparable and in some cases higher than those of the reference cells made with CBD CdS and sputtered ZnO have been obtained (up to 12.7% with indium treatments).

UR - https://www.scopus.com/pages/publications/18844475626

U2 - 10.1016/S0040-6090(99)00861-5

DO - 10.1016/S0040-6090(99)00861-5

M3 - Conference article

AN - SCOPUS:18844475626

SN - 0040-6090

VL - 361

SP - 187

EP - 192

JO - Thin Solid Films

JF - Thin Solid Films

T2 - The 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics

Y2 - 1 June 1999 through 4 June 1999

ER -

Wet treatment based interface engineering for high efficiency Cu(In,Ga)Se₂ solar cells

Abstract

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