Abstract
The electronic transport properties and the microstructure of a series of hydrogenated polymorphous silicon (pm-Si:H) samples prepared under different conditions have been studied. Hydrogen bonding and transport properties have been linked: to exhibit good transport properties the material has to present a peculiar microstructure revealed by the hydrogen bonding. However, the hydrogen bonding and/or content in this structure has to be adjusted via the deposition conditions to reach an optimum hydrogen incorporation leading to the best layer and the best solar cell device.
| Original language | English |
|---|---|
| Pages (from-to) | 241-246 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 427 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 3 Mar 2003 |
| Event | E-MRS, K - Strasbourg, France Duration: 18 Jun 2003 → 21 Jun 2003 |
Keywords
- Hydrogen bonding
- Polymorphous silicon
- Structure
- Transport properties
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