X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

M. Menichelli; L. Antognini; A. Bashiri; M. Bizzarri; L. Calcagnile; M. Caprai; A. P. Caricato; R. Catalano; G. A.P. Cirrone; T. Croci; G. Cuttone; S. Dunand; M. Fabi; L. Frontini; C. Grimani; M. Ionica; K. Kanxheri; M. Large; V. Liberali; M. Martino; G. Maruccio; G. Mazza; A. G. Monteduro; A. Morozzi; F. Moscatelli; S. Pallotta; A. Papi; D. Passeri; M. Pedio; M. Petasecca; G. Petringa; F. Peverini; L. Piccolo; P. Placidi; G. Quarta; S. Rizzato; G. Rossi; F. Sabbatini; A. Stabile; L. Servoli; C. Talamonti; L. Tosti; M. Villani; R. J. Wheadon; N. Wyrsch; N. Zema

doi:10.1109/IWASI58316.2023.10164611

X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

M. Menichelli
, L. Antognini
, A. Bashiri
, M. Bizzarri
, L. Calcagnile
, M. Caprai
, A. P. Caricato
, R. Catalano
, G. A.P. Cirrone
, T. Croci
, G. Cuttone
, S. Dunand
, M. Fabi
, L. Frontini
, C. Grimani
, M. Ionica
, K. Kanxheri
, M. Large
, V. Liberali
, M. Martino

G. Maruccio, G. Mazza, A. G. Monteduro, A. Morozzi, F. Moscatelli, S. Pallotta, A. Papi, D. Passeri, M. Pedio, M. Petasecca, G. Petringa, F. Peverini, L. Piccolo, P. Placidi, G. Quarta, S. Rizzato, G. Rossi, F. Sabbatini, A. Stabile, L. Servoli, C. Talamonti, L. Tosti, M. Villani, R. J. Wheadon, N. Wyrsch, N. Zema

INFN Sezione di Perugia
Azienda ospedaliera S.Maria
INFN Sezione di Torino
Institute of Electrical and Microengineering (IME)
University of Wollongong
University of Perugia
University of Salento
INFN-LNS
Istituto Nazionale di Fisica Nucleare, Sezione di Firenze
University of Urbino Carlo Bo
Sezione INFN di Milano
Ev-K2-CNR Committee
Dipartimento di Fisica Scienze Biomediche sperimentali e Cliniche Mario Serio
Consiglio Nazionale delle Ricerche

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Due to the properties of a-Si:H its usage for dosimetry, beam monitoring for particle physics and nuclear medicine, as well as, radiation flux measurement for space applications and neutron flux measurement can be foreseen. In this paper the dosimetric X-ray response of p-i-n diodes deposited on Polyimide will be studied. In particular we will study the linearity of the photocurrent response to X-rays versus dose-rate from which we will extract the dosimetric sensitivity at various bias voltages. We will repeat this study for devices having two different areas (2 mm x 2 mm and 5 mm x 5 mm) also a measurement of stability of X-ray response versus time will be shown.

Original language	English
Title of host publication	Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	190-193
Number of pages	4
ISBN (Electronic)	9798350336948
DOIs	https://doi.org/10.1109/IWASI58316.2023.10164611
Publication status	Published - 1 Jan 2023
Externally published	Yes
Event	9th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2023 - Monopoli, Italy Duration: 8 Jun 2023 → 9 Jun 2023

Publication series

Name	Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023

Conference

Conference	9th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2023
Country/Territory	Italy
City	Monopoli
Period	8/06/23 → 9/06/23

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

Keywords

Flexible detectors.
Hydrogenated Silicon detectors
Radiation Hardness

Access to Document

10.1109/IWASI58316.2023.10164611

Cite this

Menichelli, M., Antognini, L., Bashiri, A., Bizzarri, M., Calcagnile, L., Caprai, M., Caricato, A. P., Catalano, R., Cirrone, G. A. P., Croci, T., Cuttone, G., Dunand, S., Fabi, M., Frontini, L., Grimani, C., Ionica, M., Kanxheri, K., Large, M., Liberali, V., ... Zema, N. (2023). X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate. In Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023 (pp. 190-193). (Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWASI58316.2023.10164611

Menichelli, M. ; Antognini, L. ; Bashiri, A. et al. / X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate. Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 190-193 (Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023).

@inproceedings{99a9f7833c86418a8f9f3db0e8842f36,

title = "X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate",

abstract = "Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Due to the properties of a-Si:H its usage for dosimetry, beam monitoring for particle physics and nuclear medicine, as well as, radiation flux measurement for space applications and neutron flux measurement can be foreseen. In this paper the dosimetric X-ray response of p-i-n diodes deposited on Polyimide will be studied. In particular we will study the linearity of the photocurrent response to X-rays versus dose-rate from which we will extract the dosimetric sensitivity at various bias voltages. We will repeat this study for devices having two different areas (2 mm x 2 mm and 5 mm x 5 mm) also a measurement of stability of X-ray response versus time will be shown.",

keywords = "Flexible detectors., Hydrogenated Silicon detectors, Radiation Hardness",

author = "M. Menichelli and L. Antognini and A. Bashiri and M. Bizzarri and L. Calcagnile and M. Caprai and Caricato, \{A. P.\} and R. Catalano and Cirrone, \{G. A.P.\} and T. Croci and G. Cuttone and S. Dunand and M. Fabi and L. Frontini and C. Grimani and M. Ionica and K. Kanxheri and M. Large and V. Liberali and M. Martino and G. Maruccio and G. Mazza and Monteduro, \{A. G.\} and A. Morozzi and F. Moscatelli and S. Pallotta and A. Papi and D. Passeri and M. Pedio and M. Petasecca and G. Petringa and F. Peverini and L. Piccolo and P. Placidi and G. Quarta and S. Rizzato and G. Rossi and F. Sabbatini and A. Stabile and L. Servoli and C. Talamonti and L. Tosti and M. Villani and Wheadon, \{R. J.\} and N. Wyrsch and N. Zema",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 9th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2023 ; Conference date: 08-06-2023 Through 09-06-2023",

year = "2023",

month = jan,

day = "1",

doi = "10.1109/IWASI58316.2023.10164611",

language = "English",

series = "Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "190--193",

booktitle = "Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023",

}

Menichelli, M, Antognini, L, Bashiri, A, Bizzarri, M, Calcagnile, L, Caprai, M, Caricato, AP, Catalano, R, Cirrone, GAP, Croci, T, Cuttone, G, Dunand, S, Fabi, M, Frontini, L, Grimani, C, Ionica, M, Kanxheri, K, Large, M, Liberali, V, Martino, M, Maruccio, G, Mazza, G, Monteduro, AG, Morozzi, A, Moscatelli, F, Pallotta, S, Papi, A, Passeri, D, Pedio, M, Petasecca, M, Petringa, G, Peverini, F, Piccolo, L, Placidi, P, Quarta, G, Rizzato, S, Rossi, G, Sabbatini, F, Stabile, A, Servoli, L, Talamonti, C, Tosti, L, Villani, M, Wheadon, RJ, Wyrsch, N & Zema, N 2023, X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate. in Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023. Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023, Institute of Electrical and Electronics Engineers Inc., pp. 190-193, 9th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2023, Monopoli, Italy, 8/06/23. https://doi.org/10.1109/IWASI58316.2023.10164611

X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate. / Menichelli, M.; Antognini, L.; Bashiri, A. et al.
Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 190-193 (Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

AU - Menichelli, M.

AU - Antognini, L.

AU - Bashiri, A.

AU - Bizzarri, M.

AU - Calcagnile, L.

AU - Caprai, M.

AU - Caricato, A. P.

AU - Catalano, R.

AU - Cirrone, G. A.P.

AU - Croci, T.

AU - Cuttone, G.

AU - Dunand, S.

AU - Fabi, M.

AU - Frontini, L.

AU - Grimani, C.

AU - Ionica, M.

AU - Kanxheri, K.

AU - Large, M.

AU - Liberali, V.

AU - Martino, M.

AU - Maruccio, G.

AU - Mazza, G.

AU - Monteduro, A. G.

AU - Morozzi, A.

AU - Moscatelli, F.

AU - Pallotta, S.

AU - Papi, A.

AU - Passeri, D.

AU - Pedio, M.

AU - Petasecca, M.

AU - Petringa, G.

AU - Peverini, F.

AU - Piccolo, L.

AU - Placidi, P.

AU - Quarta, G.

AU - Rizzato, S.

AU - Rossi, G.

AU - Sabbatini, F.

AU - Stabile, A.

AU - Servoli, L.

AU - Talamonti, C.

AU - Tosti, L.

AU - Villani, M.

AU - Wheadon, R. J.

AU - Wyrsch, N.

AU - Zema, N.

PY - 2023/1/1

Y1 - 2023/1/1

N2 - Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Due to the properties of a-Si:H its usage for dosimetry, beam monitoring for particle physics and nuclear medicine, as well as, radiation flux measurement for space applications and neutron flux measurement can be foreseen. In this paper the dosimetric X-ray response of p-i-n diodes deposited on Polyimide will be studied. In particular we will study the linearity of the photocurrent response to X-rays versus dose-rate from which we will extract the dosimetric sensitivity at various bias voltages. We will repeat this study for devices having two different areas (2 mm x 2 mm and 5 mm x 5 mm) also a measurement of stability of X-ray response versus time will be shown.

AB - Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Due to the properties of a-Si:H its usage for dosimetry, beam monitoring for particle physics and nuclear medicine, as well as, radiation flux measurement for space applications and neutron flux measurement can be foreseen. In this paper the dosimetric X-ray response of p-i-n diodes deposited on Polyimide will be studied. In particular we will study the linearity of the photocurrent response to X-rays versus dose-rate from which we will extract the dosimetric sensitivity at various bias voltages. We will repeat this study for devices having two different areas (2 mm x 2 mm and 5 mm x 5 mm) also a measurement of stability of X-ray response versus time will be shown.

KW - Flexible detectors.

KW - Hydrogenated Silicon detectors

KW - Radiation Hardness

U2 - 10.1109/IWASI58316.2023.10164611

DO - 10.1109/IWASI58316.2023.10164611

M3 - Conference contribution

AN - SCOPUS:85165792727

T3 - Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023

SP - 190

EP - 193

BT - Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 9th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2023

Y2 - 8 June 2023 through 9 June 2023

ER -

Menichelli M, Antognini L, Bashiri A, Bizzarri M, Calcagnile L, Caprai M et al. X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate. In Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 190-193. (Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023). doi: 10.1109/IWASI58316.2023.10164611

X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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