XPS analysis of porous silicon

Damien Aureau, Muriel Bouttemy, Jackie Vigneron, Jean Noël Chazalviel, François Ozanam, Arnaud Etcheberry

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This manuscript presents an original XPS study of mesoporous p-type silicon samples. The use of X-ray photoelectron spectroscopy helps in understanding the different chemical environments of silicon atoms generated during porous-silicon formation and their evolution in time. Thus, the oxidation state and the contamination can be precisely known and controlled. The loss of the flatness of the surface is followed by the modification of the plasmon peaks and the morphology obtained is monitored by SEM.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages107-114
Number of pages8
Edition37
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 1 Jan 2013

Publication series

NameECS Transactions
Number37
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

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