@inproceedings{7190017c66a4442ab07e61c281248c47,
title = "20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate",
abstract = "We report original results on GSMBE grown InAs/InP QD structures. Three single section devices show passive mode locking from 20 GHz to 83 GHz with low RF spectral width (32 kHz) and low pulse duration of 1.3 ps. We report also a double wavelength emission at high injection current, associated with degradation of mode locking properties. The real cause of these phenomena is still unclear.",
keywords = "Mode-locking, quantum dots (QDs), semiconductors laser",
author = "K. Klaime and R. Piron and C. Paranthoen and T. Batte and F. Grillot and O. Dehaese and S. Loualiche and \{Le Corre\}, A. and R. Rosales and K. Merghem and A. Martinez and A. Ramdane",
year = "2012",
month = dec,
day = "1",
doi = "10.1109/ICIPRM.2012.6403352",
language = "English",
isbn = "9781467317252",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "181--184",
booktitle = "2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012",
note = "2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 ; Conference date: 27-08-2012 Through 30-08-2012",
}