TY - GEN
T1 - 2.45 GHz /5.8 GHz dual-band power amplifier for wireless power transfer in space applications
AU - Niotaki, K.
AU - Cañavate-Sanchez, M. J.
AU - Collado, A.
AU - Goussetis, G.
AU - Georgiadis, A.
AU - Brazil, T.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/7/2
Y1 - 2017/7/2
N2 - Recently wireless power transfer (WPT) has received special attention due to the increasing need for autonomous devices to implement concepts such as the Internet of Things (IoT). This work deals with the design of a dual-band power amplifier for wireless power transfer. The ISM frequency bands of 2.4 GHz and 5.8 GHz were selected as they are typically used in far-field WPT systems. Among the available technologies for the design of circuits operating at the microwave and millimetre wave frequency bands stands the Substrate Integrated Waveguide (SIW) technology that combines the advantages of a bulky metallic waveguide such as low-losses and high isolation and microstrip technology such as ease of fabrication and reduced fabrication cost. This work combines the concept of Composite Right/Left-Handed (CRLH) unit cells and SIW technology for the implementation of an efficient power amplifier. A 10 W RF power GaN HEMT transistor from Cree was selected for the design. The simulated results showed a PAE of 55% and a gain of 14 dB at 2.4 GHz and a PAE of 36% and a gain of 9.7 dB at 5.8 GHz.
AB - Recently wireless power transfer (WPT) has received special attention due to the increasing need for autonomous devices to implement concepts such as the Internet of Things (IoT). This work deals with the design of a dual-band power amplifier for wireless power transfer. The ISM frequency bands of 2.4 GHz and 5.8 GHz were selected as they are typically used in far-field WPT systems. Among the available technologies for the design of circuits operating at the microwave and millimetre wave frequency bands stands the Substrate Integrated Waveguide (SIW) technology that combines the advantages of a bulky metallic waveguide such as low-losses and high isolation and microstrip technology such as ease of fabrication and reduced fabrication cost. This work combines the concept of Composite Right/Left-Handed (CRLH) unit cells and SIW technology for the implementation of an efficient power amplifier. A 10 W RF power GaN HEMT transistor from Cree was selected for the design. The simulated results showed a PAE of 55% and a gain of 14 dB at 2.4 GHz and a PAE of 36% and a gain of 9.7 dB at 5.8 GHz.
KW - Composite Right/Left-Handed unit cells
KW - Dual-Band power amplifier
KW - GaN HEMT
KW - Substrate Integrated Waveguide
KW - Wireless power transfer
UR - https://www.scopus.com/pages/publications/85052376697
U2 - 10.1049/ic.2017.0006
DO - 10.1049/ic.2017.0006
M3 - Conference contribution
AN - SCOPUS:85052376697
T3 - Active and Passive RF Devices 2017
BT - Active and Passive RF Devices 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 Active and Passive RF Devices
Y2 - 8 May 2017
ER -