A better understanding of the growth mechanism of Zn(S,O,OH) chemical bath deposited buffer layers for high efficiency Cu(In,Ga)(S,Se) 2 solar cells

C. Hubert; N. Naghavi; A. Etcheberry; O. Roussel; D. Hariskos; M. Powalla; O. Kerrec; D. Lincot

doi:10.1002/pssa.200879446

A better understanding of the growth mechanism of Zn(S,O,OH) chemical bath deposited buffer layers for high efficiency Cu(In,Ga)(S,Se) ₂ solar cells

C. Hubert
, N. Naghavi
, A. Etcheberry
, O. Roussel
, D. Hariskos
, M. Powalla
, O. Kerrec
, D. Lincot

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

In the field of Cu(Ga,In)(S,Se) ₂ photovoltaic technology, zinc sulphide based buffer layers prepared by Chemical Bath Deposition (CBD) have already demonstrated their potential to replace CdS. This paper aims on a better understanding of deposition mechanism of the Zn(S,O,OH) buffer layers. First, the influence of deposition parameters is studied from solution chemistry considerations by constructing solubility diagrams of ZnS, ZnO, and Zn(OH) ₂. Experimental studies are then carried out by the in situ quartz crystal microgravimetry (QCM) technique. A global equation for the growth rate is derived from these experiments. The morphology and composition of Zn(S,O,OH) films are then determined using scanning electron microscopy and X-ray photoelectron spectroscopy techniques. Electro-deposited-CIS/Zn(S,O,OH)/ZnO and co-evaporated-CIGS/Zn(S,O,OH)/ZnO cells were prepared with efficiencies similar to that of reference CBD CdS buffer layers.

langue originale	Anglais
Pages (de - à)	2335-2339
Nombre de pages	5
journal	Physica Status Solidi (A) Applications and Materials Science
Volume	205
Numéro de publication	10
Les DOIs	https://doi.org/10.1002/pssa.200879446
état	Publié - 1 oct. 2008

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10.1002/pssa.200879446

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Hubert, C., Naghavi, N., Etcheberry, A., Roussel, O., Hariskos, D., Powalla, M., Kerrec, O., & Lincot, D. (2008). A better understanding of the growth mechanism of Zn(S,O,OH) chemical bath deposited buffer layers for high efficiency Cu(In,Ga)(S,Se) ₂ solar cells. Physica Status Solidi (A) Applications and Materials Science, 205(10), 2335-2339. https://doi.org/10.1002/pssa.200879446

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title = "A better understanding of the growth mechanism of Zn(S,O,OH) chemical bath deposited buffer layers for high efficiency Cu(In,Ga)(S,Se) 2 solar cells",

abstract = "In the field of Cu(Ga,In)(S,Se) 2 photovoltaic technology, zinc sulphide based buffer layers prepared by Chemical Bath Deposition (CBD) have already demonstrated their potential to replace CdS. This paper aims on a better understanding of deposition mechanism of the Zn(S,O,OH) buffer layers. First, the influence of deposition parameters is studied from solution chemistry considerations by constructing solubility diagrams of ZnS, ZnO, and Zn(OH) 2. Experimental studies are then carried out by the in situ quartz crystal microgravimetry (QCM) technique. A global equation for the growth rate is derived from these experiments. The morphology and composition of Zn(S,O,OH) films are then determined using scanning electron microscopy and X-ray photoelectron spectroscopy techniques. Electro-deposited-CIS/Zn(S,O,OH)/ZnO and co-evaporated-CIGS/Zn(S,O,OH)/ZnO cells were prepared with efficiencies similar to that of reference CBD CdS buffer layers.",

author = "C. Hubert and N. Naghavi and A. Etcheberry and O. Roussel and D. Hariskos and M. Powalla and O. Kerrec and D. Lincot",

year = "2008",

month = oct,

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Hubert, C, Naghavi, N, Etcheberry, A, Roussel, O, Hariskos, D, Powalla, M, Kerrec, O & Lincot, D 2008, 'A better understanding of the growth mechanism of Zn(S,O,OH) chemical bath deposited buffer layers for high efficiency Cu(In,Ga)(S,Se) ₂ solar cells', Physica Status Solidi (A) Applications and Materials Science, VOL. 205, Numéro 10, p. 2335-2339. https://doi.org/10.1002/pssa.200879446

A better understanding of the growth mechanism of Zn(S,O,OH) chemical bath deposited buffer layers for high efficiency Cu(In,Ga)(S,Se) ₂ solar cells. / Hubert, C.; Naghavi, N.; Etcheberry, A. et al.
Dans: Physica Status Solidi (A) Applications and Materials Science, Vol 205, Numéro 10, 01.10.2008, p. 2335-2339.

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

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T1 - A better understanding of the growth mechanism of Zn(S,O,OH) chemical bath deposited buffer layers for high efficiency Cu(In,Ga)(S,Se) 2 solar cells

AU - Hubert, C.

AU - Naghavi, N.

AU - Etcheberry, A.

AU - Roussel, O.

AU - Hariskos, D.

AU - Powalla, M.

AU - Kerrec, O.

AU - Lincot, D.

PY - 2008/10/1

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N2 - In the field of Cu(Ga,In)(S,Se) 2 photovoltaic technology, zinc sulphide based buffer layers prepared by Chemical Bath Deposition (CBD) have already demonstrated their potential to replace CdS. This paper aims on a better understanding of deposition mechanism of the Zn(S,O,OH) buffer layers. First, the influence of deposition parameters is studied from solution chemistry considerations by constructing solubility diagrams of ZnS, ZnO, and Zn(OH) 2. Experimental studies are then carried out by the in situ quartz crystal microgravimetry (QCM) technique. A global equation for the growth rate is derived from these experiments. The morphology and composition of Zn(S,O,OH) films are then determined using scanning electron microscopy and X-ray photoelectron spectroscopy techniques. Electro-deposited-CIS/Zn(S,O,OH)/ZnO and co-evaporated-CIGS/Zn(S,O,OH)/ZnO cells were prepared with efficiencies similar to that of reference CBD CdS buffer layers.

AB - In the field of Cu(Ga,In)(S,Se) 2 photovoltaic technology, zinc sulphide based buffer layers prepared by Chemical Bath Deposition (CBD) have already demonstrated their potential to replace CdS. This paper aims on a better understanding of deposition mechanism of the Zn(S,O,OH) buffer layers. First, the influence of deposition parameters is studied from solution chemistry considerations by constructing solubility diagrams of ZnS, ZnO, and Zn(OH) 2. Experimental studies are then carried out by the in situ quartz crystal microgravimetry (QCM) technique. A global equation for the growth rate is derived from these experiments. The morphology and composition of Zn(S,O,OH) films are then determined using scanning electron microscopy and X-ray photoelectron spectroscopy techniques. Electro-deposited-CIS/Zn(S,O,OH)/ZnO and co-evaporated-CIGS/Zn(S,O,OH)/ZnO cells were prepared with efficiencies similar to that of reference CBD CdS buffer layers.

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