A candidate for grain boundary pipe diffusion and intrinsic electrical activity in silicon

O. B.M. Hardouin Duparc; M. Torrent

doi:10.4028/www.scientific.net/msf.207-209.221

A candidate for grain boundary pipe diffusion and intrinsic electrical activity in silicon

O. B.M. Hardouin Duparc
, M. Torrent

Laboratoire des Solides Irradiés

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The high temperature behaviour of a Σ = 25 (710) symmetric tilt Grain Boundary (GB) has been investigated by molecular dynamics simulation in Si. The core structure first oscillates between several variants and rapidly disorders to pipe diffusion. In addition, a low energy non fully tetra co-ordinated structure is found which has electronic states in the gap.

langue originale	Anglais
Pages (de - à)	221-224
Nombre de pages	4
journal	Materials Science Forum
Volume	207-209
Numéro de publication	PART 1
Les DOIs	https://doi.org/10.4028/www.scientific.net/msf.207-209.221
état	Publié - 1 janv. 1996

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title = "A candidate for grain boundary pipe diffusion and intrinsic electrical activity in silicon",

abstract = "The high temperature behaviour of a Σ = 25 (710) symmetric tilt Grain Boundary (GB) has been investigated by molecular dynamics simulation in Si. The core structure first oscillates between several variants and rapidly disorders to pipe diffusion. In addition, a low energy non fully tetra co-ordinated structure is found which has electronic states in the gap.",

keywords = "Boundary, Conditions, Grain Boundary, Molecular Dynamics, Numerical Simulations, Silicon, Tight Binding",

author = "\{Hardouin Duparc\}, \{O. B.M.\} and M. Torrent",

year = "1996",

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N2 - The high temperature behaviour of a Σ = 25 (710) symmetric tilt Grain Boundary (GB) has been investigated by molecular dynamics simulation in Si. The core structure first oscillates between several variants and rapidly disorders to pipe diffusion. In addition, a low energy non fully tetra co-ordinated structure is found which has electronic states in the gap.

AB - The high temperature behaviour of a Σ = 25 (710) symmetric tilt Grain Boundary (GB) has been investigated by molecular dynamics simulation in Si. The core structure first oscillates between several variants and rapidly disorders to pipe diffusion. In addition, a low energy non fully tetra co-ordinated structure is found which has electronic states in the gap.

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KW - Conditions

KW - Grain Boundary

KW - Molecular Dynamics

KW - Numerical Simulations

KW - Silicon

KW - Tight Binding

UR - https://www.scopus.com/pages/publications/0348210160

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DO - 10.4028/www.scientific.net/msf.207-209.221

M3 - Article

AN - SCOPUS:0348210160

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SP - 221

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JO - Materials Science Forum

JF - Materials Science Forum

IS - PART 1

ER -

A candidate for grain boundary pipe diffusion and intrinsic electrical activity in silicon

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