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A dual-band power amplifier based on composite right/left-handed matching networks

  • Optical Networks and Systems Department
  • Iquadrat S.L.

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collectionContribution à une conférenceRevue par des pairs

1 Citation (Scopus)

Résumé

This paper presents the design of a dual-band power amplifier operating at 2.4 GHz and 3.35 GHz. The proposed topology is based on the use of composite right/left-handed unit cells. A composite right/left-handed cell exhibits a dualband frequency response at an arbitrary pair of frequencies because of its phase characteristics. A power amplifier based on an enhancement mode pseudomorphic HEMT transistor is simulated and manufactured. The fabricated prototype leads to a dual-band amplification and is characterized in terms of measurements. A maximum drain efficiency of 65% and 52% is achieved for an output level of 28.7 dBm and 27.5 dBm at 2.4 GHz and 3.35 GHz, respectively. The presented approach can be applied for the design of dual-band matching networks for microwave circuits operating at two arbitrary frequencies.

langue originaleAnglais
titreProceedings - Electronic Components and Technology Conference
EditeurInstitute of Electrical and Electronics Engineers Inc.
Pages796-802
Nombre de pages7
ISBN (Electronique)9781479924073
Les DOIs
étatPublié - 11 sept. 2014
Modification externeOui
Evénement64th Electronic Components and Technology Conference, ECTC 2014 - Orlando, États-Unis
Durée: 27 mai 201430 mai 2014

Série de publications

NomProceedings - Electronic Components and Technology Conference
ISSN (imprimé)0569-5503

Une conférence

Une conférence64th Electronic Components and Technology Conference, ECTC 2014
Pays/TerritoireÉtats-Unis
La villeOrlando
période27/05/1430/05/14

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