A graphene-based non-volatile memory

Loic Loisel; Ange Maurice; Berengere Lebental; Stefano Vezzoli; Costel Sorin Cojocaru; Beng Kang Tay

doi:10.1117/12.2188110

A graphene-based non-volatile memory

Loic Loisel
, Ange Maurice
, Berengere Lebental
, Stefano Vezzoli
, Costel Sorin Cojocaru
, Beng Kang Tay

Nanyang Technological University
Research Techno Plaza
Université Paris-Est
Nanyang Technological University

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

We report on the development and characterization of a simple two-terminal non-volatile graphene switch. After an initial electroforming step during which Joule heating leads to the formation of a nano-gap impeding the current flow, the devices can be switched reversibly between two well-separated resistance states. To do so, either voltage sweeps or pulses can be used, with the condition that V^SET < V^RESET, where SET is the process decreasing the resistance and RESET the process increasing the resistance. We achieve reversible switching on more than 100 cycles with resistance ratio values of 10⁴. This approach of graphene memory is competitive as compared to other graphene approaches such as redox of graphene oxide, or electro-mechanical switches with suspended graphene. We suggest a switching model based on a planar electro-mechanical switch, whereby electrostatic, elastic and friction forces are competing to switch devices ON and OFF, and the stability in the ON state is achieved by the formation of covalent bonds between the two stretched sides of the graphene, hence bridging the nano-gap. Developing a planar electro-mechanical switch enables to obtain the advantages of electro-mechanical switches while avoiding most of their drawbacks.

langue originale	Anglais
titre	Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII
rédacteurs en chef	Manijeh Razeghi, Can Bayram, Jae Su Yu, Maziar Ghazinejad
Editeur	SPIE
ISBN (Electronique)	9781628417180
Les DOIs	https://doi.org/10.1117/12.2188110
état	Publié - 1 janv. 2015
Evénement	Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII - San Diego, États-Unis Durée: 9 août 2015 → 12 août 2015

Série de publications

Nom	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9552
ISSN (imprimé)	0277-786X
ISSN (Electronique)	1996-756X

Une conférence

Une conférence	Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII
Pays/Territoire	États-Unis
La ville	San Diego
période	9/08/15 → 12/08/15

Accès au document

10.1117/12.2188110

Contient cette citation

Loisel, L., Maurice, A., Lebental, B., Vezzoli, S., Cojocaru, C. S., & Tay, B. K. (2015). A graphene-based non-volatile memory. Dans M. Razeghi, C. Bayram, J. S. Yu, & M. Ghazinejad (eds.), Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII Article 95520R (Proceedings of SPIE - The International Society for Optical Engineering; Vol 9552). SPIE. https://doi.org/10.1117/12.2188110

@inproceedings{93202e532d2242829c6d973d2d396b00,

title = "A graphene-based non-volatile memory",

abstract = "We report on the development and characterization of a simple two-terminal non-volatile graphene switch. After an initial electroforming step during which Joule heating leads to the formation of a nano-gap impeding the current flow, the devices can be switched reversibly between two well-separated resistance states. To do so, either voltage sweeps or pulses can be used, with the condition that VSET < VRESET, where SET is the process decreasing the resistance and RESET the process increasing the resistance. We achieve reversible switching on more than 100 cycles with resistance ratio values of 104. This approach of graphene memory is competitive as compared to other graphene approaches such as redox of graphene oxide, or electro-mechanical switches with suspended graphene. We suggest a switching model based on a planar electro-mechanical switch, whereby electrostatic, elastic and friction forces are competing to switch devices ON and OFF, and the stability in the ON state is achieved by the formation of covalent bonds between the two stretched sides of the graphene, hence bridging the nano-gap. Developing a planar electro-mechanical switch enables to obtain the advantages of electro-mechanical switches while avoiding most of their drawbacks.",

keywords = "Electrical Breakdown, Electro-Mechanical Switch, Graphene, Nano-Gap, Non-volatile Memory",

author = "Loic Loisel and Ange Maurice and Berengere Lebental and Stefano Vezzoli and Cojocaru, \{Costel Sorin\} and Tay, \{Beng Kang\}",

note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII ; Conference date: 09-08-2015 Through 12-08-2015",

year = "2015",

month = jan,

day = "1",

doi = "10.1117/12.2188110",

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booktitle = "Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII",

}

Loisel, L, Maurice, A, Lebental, B, Vezzoli, S, Cojocaru, CS & Tay, BK 2015, A graphene-based non-volatile memory. Dans M Razeghi, C Bayram, JS Yu & M Ghazinejad (eds), Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII., 95520R, Proceedings of SPIE - The International Society for Optical Engineering, VOL. 9552, SPIE, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII, San Diego, États-Unis, 9/08/15. https://doi.org/10.1117/12.2188110

A graphene-based non-volatile memory. / Loisel, Loic; Maurice, Ange; Lebental, Berengere et al.
Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII. Ed. / Manijeh Razeghi; Can Bayram; Jae Su Yu; Maziar Ghazinejad. SPIE, 2015. 95520R (Proceedings of SPIE - The International Society for Optical Engineering; Vol 9552).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - A graphene-based non-volatile memory

AU - Loisel, Loic

AU - Maurice, Ange

AU - Lebental, Berengere

AU - Vezzoli, Stefano

AU - Cojocaru, Costel Sorin

AU - Tay, Beng Kang

PY - 2015/1/1

Y1 - 2015/1/1

N2 - We report on the development and characterization of a simple two-terminal non-volatile graphene switch. After an initial electroforming step during which Joule heating leads to the formation of a nano-gap impeding the current flow, the devices can be switched reversibly between two well-separated resistance states. To do so, either voltage sweeps or pulses can be used, with the condition that VSET < VRESET, where SET is the process decreasing the resistance and RESET the process increasing the resistance. We achieve reversible switching on more than 100 cycles with resistance ratio values of 104. This approach of graphene memory is competitive as compared to other graphene approaches such as redox of graphene oxide, or electro-mechanical switches with suspended graphene. We suggest a switching model based on a planar electro-mechanical switch, whereby electrostatic, elastic and friction forces are competing to switch devices ON and OFF, and the stability in the ON state is achieved by the formation of covalent bonds between the two stretched sides of the graphene, hence bridging the nano-gap. Developing a planar electro-mechanical switch enables to obtain the advantages of electro-mechanical switches while avoiding most of their drawbacks.

AB - We report on the development and characterization of a simple two-terminal non-volatile graphene switch. After an initial electroforming step during which Joule heating leads to the formation of a nano-gap impeding the current flow, the devices can be switched reversibly between two well-separated resistance states. To do so, either voltage sweeps or pulses can be used, with the condition that VSET < VRESET, where SET is the process decreasing the resistance and RESET the process increasing the resistance. We achieve reversible switching on more than 100 cycles with resistance ratio values of 104. This approach of graphene memory is competitive as compared to other graphene approaches such as redox of graphene oxide, or electro-mechanical switches with suspended graphene. We suggest a switching model based on a planar electro-mechanical switch, whereby electrostatic, elastic and friction forces are competing to switch devices ON and OFF, and the stability in the ON state is achieved by the formation of covalent bonds between the two stretched sides of the graphene, hence bridging the nano-gap. Developing a planar electro-mechanical switch enables to obtain the advantages of electro-mechanical switches while avoiding most of their drawbacks.

KW - Electrical Breakdown

KW - Electro-Mechanical Switch

KW - Graphene

KW - Nano-Gap

KW - Non-volatile Memory

U2 - 10.1117/12.2188110

DO - 10.1117/12.2188110

M3 - Conference contribution

AN - SCOPUS:84951064188

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII

A2 - Razeghi, Manijeh

A2 - Bayram, Can

A2 - Yu, Jae Su

A2 - Ghazinejad, Maziar

PB - SPIE

T2 - Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII

Y2 - 9 August 2015 through 12 August 2015

ER -

Loisel L, Maurice A, Lebental B, Vezzoli S, Cojocaru CS, Tay BK. A graphene-based non-volatile memory. Dans Razeghi M, Bayram C, Yu JS, Ghazinejad M, rédacteurs en chef, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII. SPIE. 2015. 95520R. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2188110

A graphene-based non-volatile memory

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Une conférence

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Contient cette citation