@inproceedings{1e16fd3a984145d1934dadb8e18ba5f5,
title = "A new empirical I-V model for NMOS and PMOS transistors",
abstract = "The authors arc with the Department of Electronics and Physics, Institute National of Telecommunications, 91000 Evry, France This paper describes a new empirical model, capable of modeling with high accuracy the current-voltage (I-V) characteristics of metal-oxide semiconductor (MOS) transistors of n-type (nMOS) and p-type (pMOS). The I-V model presents a simplified parameters extraction method, easy to obtain and to implement using computer aide design (CAD) software. The model was validated under DC and transient simulations. The extraction procedure and results are described in the article.",
keywords = "CMOS, FET, Modeling, NMOS, PMOS",
author = "Hirata, \{Francisco I.\} and Muriel Muller and Yang Ni and Claude Gimenes",
year = "2007",
month = dec,
day = "1",
doi = "10.1109/ICM.2007.4497728",
language = "English",
isbn = "9781424418473",
series = "Proceedings of the International Conference on Microelectronics, ICM",
pages = "355--358",
booktitle = "Proceedings of the 19th International Conference on Microelectronics, ICM",
note = "19th International Conference on Microelectronics, ICM ; Conference date: 29-12-2007 Through 31-12-2007",
}