TY - GEN
T1 - A novel circuit design of true random number generator using magnetic tunnel junction
AU - Wang, You
AU - Cai, Hao
AU - Naviner, Lirida A.B.
AU - Klein, Jacques Olivier
AU - Yang, Jianlei
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2016 ACM.
PY - 2016/9/14
Y1 - 2016/9/14
N2 - Random numbers are widely used in the cryptography and security systems. However, most of the true random number generators (TRNG) which use physical randomness are with high complexity and high power consumption. This paper proposes a new TRNG circuit using magnetic tunnel junction (MTJ). As one of the reliability issues in MTJ based circuit, the stochastic switching behavior provides a perfect physical source of randomness. The functionality of proposed design is validated by transient simulations with 28nm fully depleted silicon-on-insulator (FDSOI) technology and an accurate MTJ compact model. Simulation results show that our design can generate accurate random bitstream stably. The reliability analysis concerning process variation of MTJs and transistors proves the good variability tolerance of our TRNG design. Furthermore, our design can output stable random bitstream around 30 tuning steps.
AB - Random numbers are widely used in the cryptography and security systems. However, most of the true random number generators (TRNG) which use physical randomness are with high complexity and high power consumption. This paper proposes a new TRNG circuit using magnetic tunnel junction (MTJ). As one of the reliability issues in MTJ based circuit, the stochastic switching behavior provides a perfect physical source of randomness. The functionality of proposed design is validated by transient simulations with 28nm fully depleted silicon-on-insulator (FDSOI) technology and an accurate MTJ compact model. Simulation results show that our design can generate accurate random bitstream stably. The reliability analysis concerning process variation of MTJs and transistors proves the good variability tolerance of our TRNG design. Furthermore, our design can output stable random bitstream around 30 tuning steps.
KW - FDSOI
KW - magnetic tunnel junction
KW - process variation
KW - stochastic switching
KW - true random number generator
U2 - 10.1145/2950067.2950108
DO - 10.1145/2950067.2950108
M3 - Conference contribution
AN - SCOPUS:84992147527
T3 - Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016
SP - 123
EP - 128
BT - Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016
PB - Presses Polytechniques Et Universitaires Romandes
T2 - 2016 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2016
Y2 - 18 July 2016 through 20 July 2016
ER -