Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy

Francois Gibelli; Laurent Lombez; Jean Francois Guillemoles

doi:10.1109/PVSC.2017.8366846

Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy

Francois Gibelli
, Laurent Lombez
, Jean Francois Guillemoles

Institut Photovoltaïque d'Ile-de-France
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Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

1 Citation (Scopus)

Résumé

The generalized Planck's law describes the light emitted by a blackbody. In the past this law has been generalized to semiconductors. Whereas Planck's orginial formulation roots on a same temperature between the body and the emitted photon gas, the generalized expression for semiconductors has been used to describe electron-hole plasmas in non-equilibrium with the lattice. Here we show experimentally how to determine different electron and hole temperatures in non-equilibrium with the photon gas. Since the absorption coefficient varies with the carrier density and is part of the generalize Planck's law, we particularly emphasize the importance of the absorption coefficient in the analysis of hot carrier photoluminescence spectra.

langue originale	Anglais
titre	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Nombre de pages	3
ISBN (Electronique)	9781509056057
Les DOIs	https://doi.org/10.1109/PVSC.2017.8366846
état	Publié - 1 janv. 2017
Evénement	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, États-Unis Durée: 25 juin 2017 → 30 juin 2017

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Nom	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Une conférence

Une conférence	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Pays/Territoire	États-Unis
La ville	Washington
période	25/06/17 → 30/06/17

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10.1109/PVSC.2017.8366846

Contient cette citation

Gibelli, F., Lombez, L., & Guillemoles, J. F. (2017). Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (p. 1-3). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366846

Gibelli, Francois ; Lombez, Laurent ; Guillemoles, Jean Francois. / Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-3 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

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title = "Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy",

abstract = "The generalized Planck's law describes the light emitted by a blackbody. In the past this law has been generalized to semiconductors. Whereas Planck's orginial formulation roots on a same temperature between the body and the emitted photon gas, the generalized expression for semiconductors has been used to describe electron-hole plasmas in non-equilibrium with the lattice. Here we show experimentally how to determine different electron and hole temperatures in non-equilibrium with the photon gas. Since the absorption coefficient varies with the carrier density and is part of the generalize Planck's law, we particularly emphasize the importance of the absorption coefficient in the analysis of hot carrier photoluminescence spectra.",

keywords = "Hot carrier photoluminescence, Hot carrier solar cells, Non-equilibrium electron and hole distributions, Non-equilibrium generalized Planck's law",

author = "Francois Gibelli and Laurent Lombez and Guillemoles, \{Jean Francois\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

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doi = "10.1109/PVSC.2017.8366846",

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Gibelli, F, Lombez, L & Guillemoles, JF 2017, Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., p. 1-3, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, États-Unis, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366846

Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy. / Gibelli, Francois; Lombez, Laurent; Guillemoles, Jean Francois.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-3 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

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AU - Guillemoles, Jean Francois

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N2 - The generalized Planck's law describes the light emitted by a blackbody. In the past this law has been generalized to semiconductors. Whereas Planck's orginial formulation roots on a same temperature between the body and the emitted photon gas, the generalized expression for semiconductors has been used to describe electron-hole plasmas in non-equilibrium with the lattice. Here we show experimentally how to determine different electron and hole temperatures in non-equilibrium with the photon gas. Since the absorption coefficient varies with the carrier density and is part of the generalize Planck's law, we particularly emphasize the importance of the absorption coefficient in the analysis of hot carrier photoluminescence spectra.

AB - The generalized Planck's law describes the light emitted by a blackbody. In the past this law has been generalized to semiconductors. Whereas Planck's orginial formulation roots on a same temperature between the body and the emitted photon gas, the generalized expression for semiconductors has been used to describe electron-hole plasmas in non-equilibrium with the lattice. Here we show experimentally how to determine different electron and hole temperatures in non-equilibrium with the photon gas. Since the absorption coefficient varies with the carrier density and is part of the generalize Planck's law, we particularly emphasize the importance of the absorption coefficient in the analysis of hot carrier photoluminescence spectra.

KW - Hot carrier photoluminescence

KW - Hot carrier solar cells

KW - Non-equilibrium electron and hole distributions

KW - Non-equilibrium generalized Planck's law

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DO - 10.1109/PVSC.2017.8366846

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T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

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EP - 3

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

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Gibelli F, Lombez L, Guillemoles JF. Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy. Dans 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-3. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366846

Absorption coefficient and non-equilibrium generalized Planck's law for improved hot carrier photoluminescence spectroscopy

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