Absorption edge singularities in highly excited semiconductors

J. P. Foing; D. Hulin; M. Joffre; M. K. Jackson; J. L. Oudar; C. Tanguy; M. Combescot

doi:10.1103/PhysRevLett.68.110

Absorption edge singularities in highly excited semiconductors

J. P. Foing
, D. Hulin
, M. Joffre
, M. K. Jackson
, J. L. Oudar
, C. Tanguy
, M. Combescot

Laboratory d'Optique Appliquée, ENSTA, CNRS-École Polytechnique
Sorbonne Université
Orange Labs

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We report the observation of an induced absorption on the high-energy side of spectral hole burning in band-to-band transitions in GaAs. This effect appears in the early stage of photoexcitation by an intense femtosecond pump pulse. This feature can be explained by edge singularities in the presence of a nonequilibrium Fermi sea.

langue originale	Anglais
Pages (de - à)	110-113
Nombre de pages	4
journal	Physical Review Letters
Volume	68
Numéro de publication	1
Les DOIs	https://doi.org/10.1103/PhysRevLett.68.110
état	Publié - 1 janv. 1992

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10.1103/PhysRevLett.68.110

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title = "Absorption edge singularities in highly excited semiconductors",

abstract = "We report the observation of an induced absorption on the high-energy side of spectral hole burning in band-to-band transitions in GaAs. This effect appears in the early stage of photoexcitation by an intense femtosecond pump pulse. This feature can be explained by edge singularities in the presence of a nonequilibrium Fermi sea.",

author = "Foing, \{J. P.\} and D. Hulin and M. Joffre and Jackson, \{M. K.\} and Oudar, \{J. L.\} and C. Tanguy and M. Combescot",

year = "1992",

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doi = "10.1103/PhysRevLett.68.110",

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AU - Foing, J. P.

AU - Hulin, D.

AU - Joffre, M.

AU - Jackson, M. K.

AU - Oudar, J. L.

AU - Tanguy, C.

AU - Combescot, M.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - We report the observation of an induced absorption on the high-energy side of spectral hole burning in band-to-band transitions in GaAs. This effect appears in the early stage of photoexcitation by an intense femtosecond pump pulse. This feature can be explained by edge singularities in the presence of a nonequilibrium Fermi sea.

AB - We report the observation of an induced absorption on the high-energy side of spectral hole burning in band-to-band transitions in GaAs. This effect appears in the early stage of photoexcitation by an intense femtosecond pump pulse. This feature can be explained by edge singularities in the presence of a nonequilibrium Fermi sea.

UR - https://www.scopus.com/pages/publications/0000864887

U2 - 10.1103/PhysRevLett.68.110

DO - 10.1103/PhysRevLett.68.110

M3 - Article

AN - SCOPUS:0000864887

SN - 0031-9007

VL - 68

SP - 110

EP - 113

JO - Physical Review Letters

JF - Physical Review Letters

IS - 1

ER -

Absorption edge singularities in highly excited semiconductors

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