TY - GEN
T1 - Accurate measurement of temperature and electrochemical potential of InGaAsP/InP heterostructures
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
AU - Lombez, Laurent
AU - Rodiere, Jean
AU - Guillemoles, Jean Francois
AU - Folliot, Herve
AU - Lecore, Alain
AU - Durand, Olivier
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - We investigated a semiconductor heterostructure based on InGaAsP multi quantum wells using optical and electrical characterizations. The optical analysis allows us to probe the potential of such a structure in the scope of hot carrier solar cell device. Using different photoluminescence techniques, the quasi Fermi level splitting Δμ and the carrier temperature is estimated as a function of the excitation power. Both values are measured at the quantum wells and at the barrier emission energy. High values of Δμ is found as well as high carrier temperature showing the capability of this structure to work as Hot Carrier Solar cell absorber. Δμ measured in the barrier energy region exceeds the minimum absorption threshold. This fact evidences the potential quantum wells structure to overcome the Schockley Queisser limit.
AB - We investigated a semiconductor heterostructure based on InGaAsP multi quantum wells using optical and electrical characterizations. The optical analysis allows us to probe the potential of such a structure in the scope of hot carrier solar cell device. Using different photoluminescence techniques, the quasi Fermi level splitting Δμ and the carrier temperature is estimated as a function of the excitation power. Both values are measured at the quantum wells and at the barrier emission energy. High values of Δμ is found as well as high carrier temperature showing the capability of this structure to work as Hot Carrier Solar cell absorber. Δμ measured in the barrier energy region exceeds the minimum absorption threshold. This fact evidences the potential quantum wells structure to overcome the Schockley Queisser limit.
KW - Characterization
KW - Hot Carriers
KW - Quasi Fermi level splitting
UR - https://www.scopus.com/pages/publications/84912120740
U2 - 10.1109/PVSC.2014.6925667
DO - 10.1109/PVSC.2014.6925667
M3 - Conference contribution
AN - SCOPUS:84912120740
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 3425
EP - 3427
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 8 June 2014 through 13 June 2014
ER -