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Acetylene gas as a carbon source: An x-ray photoemission spectroscopy and near-edge x-ray absorption fine structure spectroscopy study of its stability on Si(111)-7×7

  • F. Rochet
  • , G. Dufour
  • , F. C. Stedile
  • , F. Sirotti
  • , P. Prieto
  • , M. De Crescenzi
  • Universie Pierre et Marie Curie - CNRS UMR 7614
  • Université Paris-Saclay
  • Universidade Federal do Rio Grande do Sul
  • University of Camerino

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

The electronic structure and bonding geometry of acetylene adsorbed at room temperature on Si(111)-7×7 is studied by a combination of synchrotron radiation x-ray photoemission spectroscopy and of near-edge x-ray absorption fine structure spectroscopy. Then the stability of the molecule, submitted to thermal annealings and to synchrotron white beam irradiation is examined. The possibility of using acetylene gas as a carbon source for the fabrication of silicon-carbon compounds (or for the formation of abrupt carbon/silicon interfaces) is discussed.

langue originaleAnglais
Pages (de - à)1692-1696
Nombre de pages5
journalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Numéro de publication3
Les DOIs
étatPublié - 1 janv. 1998
Modification externeOui

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