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Advances in Compact Modeling of Organic Field-Effect Transistors

  • Sungyeop Jung
  • , Yvan Bonnassieux
  • , Gilles Horowitz
  • , Sungjune Jung
  • , Benjamin Iniguez
  • , Chang Hyun Kim
  • Pohang University of Science and Technology
  • Seoul National University
  • CNRS
  • Universitat Rovira i Virgili
  • Gachon University

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

39 Citations (Scopus)

Résumé

In this review, recent advances in compact modeling of organic field-effect transistors (OFETs) are presented. Despite the inherent strength for printed flexible electronics and the extremely aggressive research conducted over more than three decades, the OFET technology still seems to remain at a relatively low technological readiness level. Among various possible reasons for that, the lack of a standard compact model, which effectively bridges the device-and system-level development, is clearly one of the most critical issues. This article broadly discusses the essential requirements, up-To-date progresses, and imminent challenges for the OFET compact device modeling toward a universal, physically valid, and applicable description of this fast-developing technology.

langue originaleAnglais
Numéro d'article9180337
Pages (de - à)1404-1415
Nombre de pages12
journalIEEE Journal of the Electron Devices Society
Volume8
Les DOIs
étatPublié - 1 janv. 2020

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