TY - GEN
T1 - Advances in the development of high efficiency III-V multijunction solar cells on Ge|Si virtual substrates
AU - Orejuela, Victor
AU - Garcia, Ivan
AU - Sanchez, Clara
AU - Hinojosa, Manuel
AU - Dadgostar, Shabnam
AU - Ghosh, Monalisa
AU - Cabarrocas, Pere Roca I.
AU - Rey-Stolle, Ignacio
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/9
Y1 - 2021/6/9
N2 - Virtual Ge substrates fabricated by direct deposition of Ge on Si have become a pathway with high potential to attain high-efficiency III-V multijunction solar cells on Si. We study the development of III-V triple junction solar cells using two types of Ge|Si virtual substrates. The first uses a thick (2-5 μm) Ge layer grown by CVD, which acts as the bottom Ge subcell. The second, grown by lowerature RT-PECVD, has a thickness of a few tens of nanometres, with the Si substrate acting as Si bottom cell. We discuss the challenges related to each design (formation of cracks, parasitic absorption in the Ge layer, dislocations,...), present the theoretical design and show the experimental results obtained. Finally, an advanced approach using embedded porous Si layers as buffer layers for crack mitigation is also presented.
AB - Virtual Ge substrates fabricated by direct deposition of Ge on Si have become a pathway with high potential to attain high-efficiency III-V multijunction solar cells on Si. We study the development of III-V triple junction solar cells using two types of Ge|Si virtual substrates. The first uses a thick (2-5 μm) Ge layer grown by CVD, which acts as the bottom Ge subcell. The second, grown by lowerature RT-PECVD, has a thickness of a few tens of nanometres, with the Si substrate acting as Si bottom cell. We discuss the challenges related to each design (formation of cracks, parasitic absorption in the Ge layer, dislocations,...), present the theoretical design and show the experimental results obtained. Finally, an advanced approach using embedded porous Si layers as buffer layers for crack mitigation is also presented.
U2 - 10.1109/CDE52135.2021.9455736
DO - 10.1109/CDE52135.2021.9455736
M3 - Conference contribution
AN - SCOPUS:85114397009
T3 - Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
SP - 27
EP - 32
BT - Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 13th Spanish Conference on Electron Devices, CDE 2021
Y2 - 9 June 2021 through 11 June 2021
ER -