Ammonia pretreatment influence on the defect propreties of Cu(In,Ga)Se 2 solar cells from admittance spectroscopy

Z. Djebbour; A. Dubois; S. Ould Saad; D. Mencaraglia; B. Canava; A. Etcheberry; J. Vigneron; J. F. Guillemoles; D. Lincot; M. Deleplanque

Ammonia pretreatment influence on the defect propreties of Cu(In,Ga)Se ₂ solar cells from admittance spectroscopy

Z. Djebbour
, A. Dubois
, S. Ould Saad
, D. Mencaraglia
, B. Canava
, A. Etcheberry
, J. Vigneron
, J. F. Guillemoles
, D. Lincot
, M. Deleplanque

Université Paris-Sud 11
Université Versailles-Saint Quentin
Institut Lavoisier de Versailles
PSL University

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

In thin film polycrystalline CdS/CIGS heterojunction solar cells, understanding the intrinsic and interface defect properties is crucial to optimize their performances. In this paper, we focus our attention on the CdS/CIGS heterointerface at different stages of its formation. All investigations were carried out on CIGS co-evaporated samples elaborated in pilot-line conditions onto which the CdS layer was deposited by Chemical Bath Deposition (CBD). This latter chemical process involves the use of a NH ₃ solution that modifies the CIGS surface composition. In order to separate the respective role of the NH₃ bath and the CdS layer thickness, we have investigated samples elaborated with several NH₃ pretreatment time of CIGS surface prior to CdS deposition. Admittance spectroscopy was used to follow the evolution of the hetero-interface defects properties.

langue originale	Anglais
titre	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
rédacteurs en chef	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	388-391
Nombre de pages	4
état	Publié - 1 déc. 2003
Modification externe	Oui
Evénement	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japon Durée: 11 mai 2003 → 18 mai 2003

Série de publications

Nom	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	A

Une conférence

Une conférence	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Pays/Territoire	Japon
La ville	Osaka
période	11/05/03 → 18/05/03

Contient cette citation

Djebbour, Z., Dubois, A., Saad, S. O., Mencaraglia, D., Canava, B., Etcheberry, A., Vigneron, J., Guillemoles, J. F., Lincot, D., & Deleplanque, M. (2003). Ammonia pretreatment influence on the defect propreties of Cu(In,Ga)Se ₂ solar cells from admittance spectroscopy. Dans K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (p. 388-391). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol A).

Djebbour, Z. ; Dubois, A. ; Saad, S. Ould et al. / Ammonia pretreatment influence on the defect propreties of Cu(In,Ga)Se ₂ solar cells from admittance spectroscopy. Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Editeur / K. Kurokawa ; L.L. Kazmerski ; B. McNeils ; M. Yamaguchi ; C. Wronski. 2003. p. 388-391 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

@inproceedings{20788066a72b45c7b42ded6417f90b5a,

title = "Ammonia pretreatment influence on the defect propreties of Cu(In,Ga)Se 2 solar cells from admittance spectroscopy",

abstract = "In thin film polycrystalline CdS/CIGS heterojunction solar cells, understanding the intrinsic and interface defect properties is crucial to optimize their performances. In this paper, we focus our attention on the CdS/CIGS heterointerface at different stages of its formation. All investigations were carried out on CIGS co-evaporated samples elaborated in pilot-line conditions onto which the CdS layer was deposited by Chemical Bath Deposition (CBD). This latter chemical process involves the use of a NH 3 solution that modifies the CIGS surface composition. In order to separate the respective role of the NH3 bath and the CdS layer thickness, we have investigated samples elaborated with several NH3 pretreatment time of CIGS surface prior to CdS deposition. Admittance spectroscopy was used to follow the evolution of the hetero-interface defects properties.",

author = "Z. Djebbour and A. Dubois and Saad, \{S. Ould\} and D. Mencaraglia and B. Canava and A. Etcheberry and J. Vigneron and Guillemoles, \{J. F.\} and D. Lincot and M. Deleplanque",

year = "2003",

month = dec,

day = "1",

language = "English",

isbn = "4990181603",

series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

pages = "388--391",

editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

Djebbour, Z, Dubois, A, Saad, SO, Mencaraglia, D, Canava, B, Etcheberry, A, Vigneron, J, Guillemoles, JF, Lincot, D & Deleplanque, M 2003, Ammonia pretreatment influence on the defect propreties of Cu(In,Ga)Se ₂ solar cells from admittance spectroscopy. Dans K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, VOL. A, p. 388-391, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japon, 11/05/03.

Ammonia pretreatment influence on the defect propreties of Cu(In,Ga)Se ₂ solar cells from admittance spectroscopy. / Djebbour, Z.; Dubois, A.; Saad, S. Ould et al.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 388-391 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol A).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Ammonia pretreatment influence on the defect propreties of Cu(In,Ga)Se 2 solar cells from admittance spectroscopy

AU - Djebbour, Z.

AU - Dubois, A.

AU - Saad, S. Ould

AU - Mencaraglia, D.

AU - Canava, B.

AU - Etcheberry, A.

AU - Vigneron, J.

AU - Guillemoles, J. F.

AU - Lincot, D.

AU - Deleplanque, M.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - In thin film polycrystalline CdS/CIGS heterojunction solar cells, understanding the intrinsic and interface defect properties is crucial to optimize their performances. In this paper, we focus our attention on the CdS/CIGS heterointerface at different stages of its formation. All investigations were carried out on CIGS co-evaporated samples elaborated in pilot-line conditions onto which the CdS layer was deposited by Chemical Bath Deposition (CBD). This latter chemical process involves the use of a NH 3 solution that modifies the CIGS surface composition. In order to separate the respective role of the NH3 bath and the CdS layer thickness, we have investigated samples elaborated with several NH3 pretreatment time of CIGS surface prior to CdS deposition. Admittance spectroscopy was used to follow the evolution of the hetero-interface defects properties.

AB - In thin film polycrystalline CdS/CIGS heterojunction solar cells, understanding the intrinsic and interface defect properties is crucial to optimize their performances. In this paper, we focus our attention on the CdS/CIGS heterointerface at different stages of its formation. All investigations were carried out on CIGS co-evaporated samples elaborated in pilot-line conditions onto which the CdS layer was deposited by Chemical Bath Deposition (CBD). This latter chemical process involves the use of a NH 3 solution that modifies the CIGS surface composition. In order to separate the respective role of the NH3 bath and the CdS layer thickness, we have investigated samples elaborated with several NH3 pretreatment time of CIGS surface prior to CdS deposition. Admittance spectroscopy was used to follow the evolution of the hetero-interface defects properties.

M3 - Conference contribution

AN - SCOPUS:6344292237

SN - 4990181603

SN - 9784990181604

T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

SP - 388

EP - 391

BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -