Résumé
The electrochemical and structural responses of silicon nanowires deposited by chemical vapor deposition are investigated. Transmission electron microscopy and Xray diffraction experiments show the electrochemical lithiation of SiNWs is not a quantitative process in good agreement with cycling experiments performed as a function of cycling limits. The SiNWs are not deeply lithiated as revealed by TEM micrographs. Our results suggest the existence of two well-defined lithiation steps, first at ∼0.2 V into amorphous silicon and then into crystalline silicon at ∼0.1 V. Cycling SiNWs above 100 mV avoid the lithiation of c-Si which preserves the silicon 3-D architecture and results in good cycling performances. A stable capacity value of ∼500 mAh g -1 is achieved over at least 50 cycles.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 1835-1839 |
| Nombre de pages | 5 |
| journal | Journal of Solid State Electrochemistry |
| Volume | 14 |
| Numéro de publication | 10 |
| Les DOIs | |
| état | Publié - 1 oct. 2010 |
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