Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling

Y. Poissant; P. Chatterjee; P. Roca i Cabarrocas

doi:10.1063/1.1623610

Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling

Y. Poissant
, P. Chatterjee
, P. Roca i Cabarrocas

Institut polytechnique de Paris
Indian Association for the Cultivation of Science

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The performance of polymorphous silicon solar cells was analyzed. The material exhibited improved electronic and transport properties and lower density of states (DOS) compared to standard a-Si:H. It was revealed that in the annealed state the red quantum efficiency (QE) improves with the thickness of the pm-Si:H i layer upto thickness of ∼ 1 μm. The deposition parameters were optimized to yield pm-Si:H based solar cells with conversion efficiencies higher than a-Si:H based cells in both the annealed and the light stabilized states.

langue originale	Anglais
Pages (de - à)	7305-7316
Nombre de pages	12
journal	Journal of Applied Physics
Volume	94
Numéro de publication	11
Les DOIs	https://doi.org/10.1063/1.1623610
état	Publié - 1 déc. 2003

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10.1063/1.1623610

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@article{308f8eefca104cc5989ff67107c733f3,

title = "Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling",

abstract = "The performance of polymorphous silicon solar cells was analyzed. The material exhibited improved electronic and transport properties and lower density of states (DOS) compared to standard a-Si:H. It was revealed that in the annealed state the red quantum efficiency (QE) improves with the thickness of the pm-Si:H i layer upto thickness of ∼ 1 μm. The deposition parameters were optimized to yield pm-Si:H based solar cells with conversion efficiencies higher than a-Si:H based cells in both the annealed and the light stabilized states.",

author = "Y. Poissant and P. Chatterjee and \{Roca i Cabarrocas\}, P.",

year = "2003",

month = dec,

day = "1",

doi = "10.1063/1.1623610",

language = "English",

volume = "94",

pages = "7305--7316",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "11",

}

TY - JOUR

T1 - Analysis and optimization of the performance of polymorphous silicon solar cells

T2 - Experimental characterization and computer modeling

AU - Poissant, Y.

AU - Chatterjee, P.

AU - Roca i Cabarrocas, P.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - The performance of polymorphous silicon solar cells was analyzed. The material exhibited improved electronic and transport properties and lower density of states (DOS) compared to standard a-Si:H. It was revealed that in the annealed state the red quantum efficiency (QE) improves with the thickness of the pm-Si:H i layer upto thickness of ∼ 1 μm. The deposition parameters were optimized to yield pm-Si:H based solar cells with conversion efficiencies higher than a-Si:H based cells in both the annealed and the light stabilized states.

AB - The performance of polymorphous silicon solar cells was analyzed. The material exhibited improved electronic and transport properties and lower density of states (DOS) compared to standard a-Si:H. It was revealed that in the annealed state the red quantum efficiency (QE) improves with the thickness of the pm-Si:H i layer upto thickness of ∼ 1 μm. The deposition parameters were optimized to yield pm-Si:H based solar cells with conversion efficiencies higher than a-Si:H based cells in both the annealed and the light stabilized states.

U2 - 10.1063/1.1623610

DO - 10.1063/1.1623610

M3 - Article

AN - SCOPUS:0348157027

SN - 0021-8979

VL - 94

SP - 7305

EP - 7316

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Analysis and optimization of the performance of polymorphous silicon solar cells: Experimental characterization and computer modeling

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