Résumé
The electrochemical dissolution of silicon in fluoride media under very high potentials (5-100 V) was investigated. The interface was characterized by voltammetry and in situ infrared spectroscopy. The infrared results indicate that the interracial oxide becomes porous above a critical potential of ∼20 V. Light emission from the interface was observed for potentials above ∼10 V. The electroluminescence signal was found to be composed of a red component and a blue component. Both components exhibit an increase in intensity as a function of applied potential, but their distinct dependence suggests that they arise from two distinct types of oxide detects and excitation mechanisms.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | C250-C255 |
| journal | Journal of the Electrochemical Society |
| Volume | 149 |
| Numéro de publication | 5 |
| Les DOIs | |
| état | Publié - 1 janv. 2002 |
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