@inproceedings{53bd6035916042198bba0c6dfe2c5a3a,
title = "Anti-stokes and stokes hot luminescence from bulk InAs and InSb",
abstract = "Spatially-resolved hot luminescence spectra have been measured from bulk InAs and InSb at room temperature with a femtosecond Ti:Sapphire laser (λ=780 nm) and an optical microscope. The Stokes and anti-Stokes luminescence intensities and their spatial extent exhibited a large, nonlinear laser-power dependence. The luminescence spatial (surface) extent was several times larger than the size of the laser spot (∼2 μm) on the sample. Surprisingly strong anti-Stokes luminescence for InAs was found even down to 400 nm. The anti-Stokes spectrum displayed an interference-like periodic intensity variation, which might imply that a bleached layer was generated by the intense laser beam.",
author = "Noboru Wada and Rowe, \{A. C.H.\} and Solin, \{S. A.\}",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994030",
language = "English",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "135--136",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}