@inproceedings{50103967ffe94295abdb9bc27f36b1f1,
title = "Apparent doping-dependence of the a-Si:H/c-Si interface degradation upon ITO sputtering",
abstract = "In this work, we address the doping dependence of SHJ solar cell precursor passivation degradation upon ITO sputtering by PVD. We report the higher apparent sensitivity of the emitter. By varying the doping, we were able to demonstrate that the emitter is not necessarily less resilient to this process. Indeed the same amount of defects can be created on the BSF side all the while remaining screened thanks to the highly effective field-effect provided by the capping n-doped a-Si:H layer.",
keywords = "ITO, amorphous silicon, crystalline silicon, degradation, heterojunction, passivation",
author = "Sobkowicz, \{Igor P.\} and Antoine Salomon and \{Roca I Cabarrocas\}, Pere",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925005",
language = "English",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "645--648",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
}