TY - GEN
T1 - Assignment of high wave-number absorption and Raman scattering peaks in microcrystalline silicon
AU - Johnson, Erik V.
AU - Kroely, Laurent
AU - Cabarrocas, Pere Roca I.
PY - 2010/1/1
Y1 - 2010/1/1
N2 - We present a detailed analysis of the narrow, twinned high-wave-number (2085 and 2100 cm-1) infrared absorption and Raman scattering peaks observed in low-density hydrogenated microcrystalline (μc-Si:H) silicon. Peaks in this wave-number range originate from the stretching modes of the Si-Hx bonds in the material, but the exact atomic configurations giving rise to these peaks is unclear. We attempt to elucidate the origins of the peaks through complementary experimental data on films grown by Matrix Distributed Electron Cyclotron Resonance (MDECR) PECVD. The different appearance and evolution of these peaks when using the two complementary measurement techniques mentioned above show that they have different origins, and cannot be attributed to a single, shifted peak. We additionally present data from secondary ion mass spectrometry (SIMS) measurements on the films to show the distribution of oxygen and carbon in the films after five months of air exposure. Finally, we provide X-ray diffraction (XRD) data and use the correlations between these measurements to propose a structural origin for the peaks.
AB - We present a detailed analysis of the narrow, twinned high-wave-number (2085 and 2100 cm-1) infrared absorption and Raman scattering peaks observed in low-density hydrogenated microcrystalline (μc-Si:H) silicon. Peaks in this wave-number range originate from the stretching modes of the Si-Hx bonds in the material, but the exact atomic configurations giving rise to these peaks is unclear. We attempt to elucidate the origins of the peaks through complementary experimental data on films grown by Matrix Distributed Electron Cyclotron Resonance (MDECR) PECVD. The different appearance and evolution of these peaks when using the two complementary measurement techniques mentioned above show that they have different origins, and cannot be attributed to a single, shifted peak. We additionally present data from secondary ion mass spectrometry (SIMS) measurements on the films to show the distribution of oxygen and carbon in the films after five months of air exposure. Finally, we provide X-ray diffraction (XRD) data and use the correlations between these measurements to propose a structural origin for the peaks.
U2 - 10.1557/proc-1245-a13-05
DO - 10.1557/proc-1245-a13-05
M3 - Conference contribution
AN - SCOPUS:78650336351
SN - 9781605112220
T3 - Materials Research Society Symposium Proceedings
SP - 277
EP - 282
BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010
PB - Materials Research Society
ER -