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Atomic Layer Deposition Grown Nb-Doped SnO2 Electron Transport Layers for High-Performance p–i–n Perovskite Devices

  • Getaneh Diress Gesesse
  • , Marion Provost
  • , Mouhamad Navid Mouhamadsiradjoudine
  • , Rene D. Mendez L
  • , Karim Medjoubi
  • , Daniel Ory
  • , Nathanaelle Schneider
  • Institut Photovoltaïque d'Ile-de-France

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

Perovskite solar devices in p–i–n architecture have attracted significant attention due to their long-term operational stability and compatibility for multijunction systems. Identifying a suitable electron transport layer (ETL), i.e., processed with a low thermal budget, scalable, highly conformal, uniform and with tunable optoelectrical properties, is a major research focus. Metal oxides produced by atomic layer deposition (ALD) have been revealed as promising candidates. Herein, we report the first application of SnO2:Nb as an ETL in p–i–n architecture perovskite solar cells (PSCs) and minimodules (PSMs). The optoelectronic properties of SnO2 were finely tuned by control of ALD process parameters and highly impacted the photovoltaic (PV) performances of the devices. Various SnO2:Nb compositions were screened on small-area devices (0.09 cm2), and the optimal one outperformed the pristine SnO2 reference (+2% absolute power conversion efficiency). The compatibility of the SnO2:Nb ETL with large scale systems and the positive impacts of Nb doping on PV performances were confirmed by fabricating the PSM (active area of 4 cm2). Further investigation, including dark J–V curves, external and internal quantum efficiencies, steady-state and time-resolved photoluminescence, and structural and morphological characterizations were performed to reveal the Nb impact on the perovskite layer and its consequence on PV performance. The enhanced PV performances are mostly ascribed to better resistances (reduced series one and increased shunt), which are linked to SnO2:Nb ETL electrical properties. Finally, PSC devices with SnO2:Nb ETL showed comparable long-term stability as the reference one. PSMs incorporating optimal SnO2:Nb ETL have +0.6% absolute efficiencies than their reference counterparts after 300 h under aging conditions recommended by ISOS-L3 protocol (1 sun, 85°, 50% relative humidity) assigned mostly to better charge transport. This strategy is applicable to other perovskite compositions, and these findings point out the potential of ALD-processed SnO2-based ETL for efficient, scalable, and stable PSCs.

langue originaleAnglais
Pages (de - à)4167-4177
Nombre de pages11
journalACS Applied Energy Materials
Volume9
Numéro de publication7
Les DOIs
étatPublié - 13 avr. 2026

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