TY - GEN
T1 - Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells to Si
AU - Talneau, A.
AU - Roblin, C.
AU - Itawi, A.
AU - Mauguin, O.
AU - Largeau, L.
AU - Beaudouin, G.
AU - Sagnes, I.
AU - Patriarche, G.
PY - 2012/12/1
Y1 - 2012/12/1
N2 - Monolithic integration of InP-based materials on Si will allow lasers as well as optical amplifiers operating at 1.55μm to be efficiently included in photonic integrated circuits. We demonstrate here oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells to Si, with an atomic-plane-thick reconstruction across the InP-Si interface. The wells photoluminescence emitted-wavelength demonstrates no shift after bonding. Several InP surface activation procedures have been investigated. This bonding approach is compatible with guiding designs including a nanostructuration, thus enabling specific designs associated to desirable optical functions.
AB - Monolithic integration of InP-based materials on Si will allow lasers as well as optical amplifiers operating at 1.55μm to be efficiently included in photonic integrated circuits. We demonstrate here oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells to Si, with an atomic-plane-thick reconstruction across the InP-Si interface. The wells photoluminescence emitted-wavelength demonstrates no shift after bonding. Several InP surface activation procedures have been investigated. This bonding approach is compatible with guiding designs including a nanostructuration, thus enabling specific designs associated to desirable optical functions.
KW - III-V integration on Si
KW - heteroepitaxial bonding
KW - interface TEM analysis
KW - photonic integrated circuits
KW - surface reconstruction
U2 - 10.1109/ICIPRM.2012.6403338
DO - 10.1109/ICIPRM.2012.6403338
M3 - Conference contribution
AN - SCOPUS:84873150194
SN - 9781467317252
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 130
EP - 132
BT - 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
T2 - 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
Y2 - 27 August 2012 through 30 August 2012
ER -