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Atomistic explanation of shear-induced amorphous band formation in boron carbide

  • Qi An
  • , Williama Goddard
  • , Tao Cheng
  • California Institute of Technology

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

Boron carbide (B4C) is very hard, but its applications are hindered by stress-induced amorphous band formation. To explain this behavior, we used density function theory (Perdew-Burke-Ernzerhof flavor) to examine the response to shear along 11 plausible slip systems. We found that the (011̄1̄)/ 1̄101 slip system has the lowest shear strength (consistent with previous experimental studies) and that this slip leads to a unique plastic deformation before failure in which a boron-carbon bond between neighboring icosahedral clusters breaks to form a carbon lone pair (Lewis base) on the C within the icosahedron. Further shear then leads this Lewis base C to form a new bond with the Lewis acidic B in the middle of a CBC chain. This then initiates destruction of this icosahedron. The result is the amorphous structure observed experimentally. We suggest how this insight could be used to strengthen B4C.

langue originaleAnglais
Numéro d'article095501
journalPhysical Review Letters
Volume113
Numéro de publication9
Les DOIs
étatPublié - 28 août 2014
Modification externeOui

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