Résumé
An original measurement system for nonlinear microwave power-transistor characterization using six-port reflectometers is presented. It allows independent active tuning of the output impedances at fo and 2/o (multiharmonic load-pull) and variation of the source impedance at the input port at fo (source-pull). An appropriate search algorithm enables automatic optimization of the output impedances and leads to fast user-friendly operation of the system. Experimental results are shown for a commercial GaAs MESFET power transistor at fo - 2 GHz.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 2068-2073 |
| Nombre de pages | 6 |
| journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 46 |
| Numéro de publication | 12 PART 1 |
| Les DOIs | |
| état | Publié - 1 déc. 1998 |
| Modification externe | Oui |
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