Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures

S. Azaizia; A. Balocchi; S. Mazzucato; F. Cadiz; F. Beato De Le Salle; H. Lehec; D. Lagarde; A. Arnoult; T. Amand; C. Fontaine; H. Carrère; X. Marie

doi:10.1088/1361-6641/aae354

Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures

S. Azaizia
, A. Balocchi
, S. Mazzucato
, F. Cadiz
, F. Beato De Le Salle
, H. Lehec
, D. Lagarde
, A. Arnoult
, T. Amand
, C. Fontaine
, H. Carrère
, X. Marie

Université Paul Sabatier

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

3 Citations (Scopus)

Résumé

Time-resolved optical orientation experiments have been performed in dilute bismide structures. Bulk layers with bismuth fractions in the range 1%-3.8% and quantum wells with bismuth fractions in the range 2.4%-7% were investigated. A clear decrease of the electron spin relaxation time is evidenced in both cases when the bismuth content increases. These results can be well interpreted by the increased efficiency of the spin relaxation mechanisms due to the bismuth induced larger spin-orbit interaction in these alloys.

langue originale	Anglais
Numéro d'article	114013
journal	Semiconductor Science and Technology
Volume	33
Numéro de publication	11
Les DOIs	https://doi.org/10.1088/1361-6641/aae354
état	Publié - 17 oct. 2018
Modification externe	Oui

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10.1088/1361-6641/aae354

Contient cette citation

Azaizia, S., Balocchi, A., Mazzucato, S., Cadiz, F., Beato De Le Salle, F., Lehec, H., Lagarde, D., Arnoult, A., Amand, T., Fontaine, C., Carrère, H., & Marie, X. (2018). Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures. Semiconductor Science and Technology, 33(11), Article 114013. https://doi.org/10.1088/1361-6641/aae354

@article{e5e1f71656f94cc3a14d5952391beae8,

title = "Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures",

abstract = "Time-resolved optical orientation experiments have been performed in dilute bismide structures. Bulk layers with bismuth fractions in the range 1\%-3.8\% and quantum wells with bismuth fractions in the range 2.4\%-7\% were investigated. A clear decrease of the electron spin relaxation time is evidenced in both cases when the bismuth content increases. These results can be well interpreted by the increased efficiency of the spin relaxation mechanisms due to the bismuth induced larger spin-orbit interaction in these alloys.",

keywords = "GaAsBi, electron spin relaxation time, quantum wells",

author = "S. Azaizia and A. Balocchi and S. Mazzucato and F. Cadiz and \{Beato De Le Salle\}, F. and H. Lehec and D. Lagarde and A. Arnoult and T. Amand and C. Fontaine and H. Carr{\`e}re and X. Marie",

note = "Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

year = "2018",

month = oct,

day = "17",

doi = "10.1088/1361-6641/aae354",

language = "English",

volume = "33",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "11",

}

Azaizia, S, Balocchi, A, Mazzucato, S, Cadiz, F, Beato De Le Salle, F, Lehec, H, Lagarde, D, Arnoult, A, Amand, T, Fontaine, C, Carrère, H & Marie, X 2018, 'Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures', Semiconductor Science and Technology, VOL. 33, Numéro 11, 114013. https://doi.org/10.1088/1361-6641/aae354

TY - JOUR

T1 - Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures

AU - Azaizia, S.

AU - Balocchi, A.

AU - Mazzucato, S.

AU - Cadiz, F.

AU - Beato De Le Salle, F.

AU - Lehec, H.

AU - Lagarde, D.

AU - Arnoult, A.

AU - Amand, T.

AU - Fontaine, C.

AU - Carrère, H.

AU - Marie, X.

PY - 2018/10/17

Y1 - 2018/10/17

N2 - Time-resolved optical orientation experiments have been performed in dilute bismide structures. Bulk layers with bismuth fractions in the range 1%-3.8% and quantum wells with bismuth fractions in the range 2.4%-7% were investigated. A clear decrease of the electron spin relaxation time is evidenced in both cases when the bismuth content increases. These results can be well interpreted by the increased efficiency of the spin relaxation mechanisms due to the bismuth induced larger spin-orbit interaction in these alloys.

AB - Time-resolved optical orientation experiments have been performed in dilute bismide structures. Bulk layers with bismuth fractions in the range 1%-3.8% and quantum wells with bismuth fractions in the range 2.4%-7% were investigated. A clear decrease of the electron spin relaxation time is evidenced in both cases when the bismuth content increases. These results can be well interpreted by the increased efficiency of the spin relaxation mechanisms due to the bismuth induced larger spin-orbit interaction in these alloys.

KW - GaAsBi

KW - electron spin relaxation time

KW - quantum wells

U2 - 10.1088/1361-6641/aae354

DO - 10.1088/1361-6641/aae354

M3 - Article

AN - SCOPUS:85055331941

SN - 0268-1242

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

M1 - 114013

ER -

Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures

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