Résumé
In the present work we explain the anomalous behavior of the attenuation of the longitudinal acoustic phonon in GaAs as a function of the phonon energy ω in the subterahertz domain. These attenuations along the [100] direction show a plateau between 0.6 and 1 GHz at low temperatures. We found an excellent agreement between measurements performed by some of us, and new ab initio calculations of third-order anharmonic processes. The formation of the plateau is explained by the competition between different phonon-phonon scattering processes such as Herring's mechanism, which dominates at low frequencies, saturates, and disappears. The plateau is shown to be determined by the phononic final-state phase space available at a given temperature. We predict that a change of scattering mechanism should also show up in the attenuation of silicon around 1.2-1.7 THz, and argue that the attenuation plateau is a general feature of cubic semiconductors.
| langue originale | Anglais |
|---|---|
| Numéro d'article | 245201 |
| journal | Physical Review B |
| Volume | 98 |
| Numéro de publication | 24 |
| Les DOIs | |
| état | Publié - 10 déc. 2018 |
| Modification externe | Oui |
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